AP2330GN MOSFET. Datasheet pdf. Equivalent
Type Designator: AP2330GN
Marking Code: M2SS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: SOT23
AP2330GN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP2330GN Datasheet (PDF)
ap2330gn.pdf
AP2330GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 90V Small Package Outline RDS(ON) 240m Surface Mount Device ID 1.7AG RoHS Compliant & Halogen-FreeSDDescriptionAP2330 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest pos
ap2330gn-hf.pdf
AP2330GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 90V Small Package Outline RDS(ON) 240m Surface Mount Device ID 1.7AG RoHS Compliant & Halogen-FreeSDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toSachieve the lowest possible on-resistance,
ap2336gn-hf.pdf
AP2336GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Small Package Outline RDS(ON) 90m Surface Mount Device ID 2.8AG RoHS Compliant & Halogen-FreeSDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, ext
ap2338gn.pdf
AP2338GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 35m Surface Mount Device ID 5AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAP2338 series are from Advanced Power innovated design andsilicon process technology to achieve
ap2332gen-hf.pdf
AP2332GEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 600VD Small Package Outline RDS(ON) 72 Surface Mount Device ID 51mAS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processingGtechniques to achieve the lowest possibl
ap2331gn-hf.pdf
AP2331GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60VD Small Package Outline RDS(ON) 0.8 Surface Mount Device ID - 1AS RoHS Compliant & Halogen-FreeSOT-23GDescription DAP2331 series are from Advanced Power innovated design and siliconprocess technology to achieve the lo
ap2332gn-hf.pdf
AP2332GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 600VD Small Package Outline RDS(ON) 300 Surface Mount Device ID 27mAS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possibl
ap2333en-hf.pdf
AP2333EN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 80m Surface Mount Device ID -2.9AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2333 series are from Advanced Power innovated design andGsilicon process technology to achiev
ap2338gn-hf.pdf
AP2338GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 35m Surface Mount Device ID 5AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on
ap2334gn-hf.pdf
AP2334GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 30VD Lower Gate Charge RDS(ON) 28m Small Footprint & Low Profile Package ID 5.6AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniquesto achieve the lowest
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: CS3410BR | AOT2500L | AOTF280A60L | FDB8444 | FDB8870 | IRFSL52N15D
History: CS3410BR | AOT2500L | AOTF280A60L | FDB8444 | FDB8870 | IRFSL52N15D
LIST
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918