AP2N075EN PDF and Equivalents Search

 

AP2N075EN Specs and Replacement

Type Designator: AP2N075EN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: SOT23S

AP2N075EN substitution

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AP2N075EN datasheet

 ..1. Size:189K  ape
ap2n075en.pdf pdf_icon

AP2N075EN

AP2N075EN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Lower Gate Charge RDS(ON) 75m Fast Switching Performance ID 3.5A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2N075E series are from Advanced Power innovated design and G silicon process technology to achiev... See More ⇒

 9.1. Size:132K  ape
ap2n050g.pdf pdf_icon

AP2N075EN

AP2N050G Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Low Gate Charge RDS(ON) 50m Fast Switching Characteristic ID3 4A S RoHS Compliant & Halogen-Free D SOT-89 G Description D AP2N050 series are from Advanced Power innovated design and silicon process technology to achieve th... See More ⇒

 9.2. Size:210K  ape
ap2n030ey.pdf pdf_icon

AP2N075EN

AP2N030EY Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Capable of 2.5V Gate Drive BVDSS 20V D Lower Gate Charge RDS(ON) 34m D Fast Switching Performance ID3 6.3A G D RoHS Compliant & Halogen-Free SOT-26 D D Description AP2N030E series are from Advanced Power innovated design and G silicon process technology ... See More ⇒

 9.3. Size:189K  ape
ap2n030en.pdf pdf_icon

AP2N075EN

AP2N030EN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Lower Gate Charge RDS(ON) 35m Fast Switching Performance ID 5.3A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2N030E series are from Advanced Power innovated design and G silicon process technology to achiev... See More ⇒

Detailed specifications: AP60PN72REN, AP60PN72RLEN, AP15TN1R5N, AP2309GEN, AP2321GN, AP2325GEN, AP2N025LN, AP2N030EN, IRLB4132, AP2P052N, AP2P053N, AP3601N, AP3N028EN, AP3N035N, AP3N045EN, AP3P080N, AP3P090N

Keywords - AP2N075EN MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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