All MOSFET. AP2N075EN Datasheet

 

AP2N075EN Datasheet and Replacement


   Type Designator: AP2N075EN
   Marking Code: A21SS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 6.5 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SOT23S
 

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AP2N075EN Datasheet (PDF)

 ..1. Size:189K  ape
 ap2n075en.pdf pdf_icon

AP2N075EN

AP2N075ENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 75m Fast Switching Performance ID 3.5AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2N075E series are from Advanced Power innovated design andGsilicon process technology to achiev

 9.1. Size:132K  ape
 ap2n050g.pdf pdf_icon

AP2N075EN

AP2N050GHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Low Gate Charge RDS(ON) 50m Fast Switching Characteristic ID3 4AS RoHS Compliant & Halogen-FreeDSOT-89GDescription DAP2N050 series are from Advanced Power innovated design andsilicon process technology to achieve th

 9.2. Size:210K  ape
 ap2n030ey.pdf pdf_icon

AP2N075EN

AP2N030EYHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 34mD Fast Switching Performance ID3 6.3AGD RoHS Compliant & Halogen-FreeSOT-26DDDescriptionAP2N030E series are from Advanced Power innovated design andGsilicon process technology

 9.3. Size:189K  ape
 ap2n030en.pdf pdf_icon

AP2N075EN

AP2N030ENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 35m Fast Switching Performance ID 5.3AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2N030E series are from Advanced Power innovated design andGsilicon process technology to achiev

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History: AP80SL400AS

Keywords - AP2N075EN MOSFET datasheet

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