All MOSFET. AP2604GY Datasheet

 

AP2604GY Datasheet and Replacement


   Type Designator: AP2604GY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT26
 

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AP2604GY Datasheet (PDF)

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AP2604GY

AP2604GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Fast Switching Characteristic BVDSS 30VDD Lower Gate Charge RDS(ON) 45mG Small Footprint & Low Profile Package ID 5.5ADSOT-26 DDDescriptionAP2604 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest poss

 0.1. Size:96K  ape
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AP2604GY

AP2604GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 30VSD Lower Gate Charge RDS(ON) 45mD Small Footprint & Low Profile Package ID 5.5AGDSOT-26 DDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, ext

 8.1. Size:137K  ape
ap2604cdt.pdf pdf_icon

AP2604GY

AP2604CDTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VD 100% Rg & UIS Test RDS(ON) 0.65m Ultra Low On-resistance ID4 375AG RoHS Compliant & Halogen-FreeSPDFN 5x6DescriptionD D D DAP2604C series are from Advanced Power innovateddesign and silicon process technology to achi

 9.1. Size:95K  ape
ap2607agy-hf.pdf pdf_icon

AP2604GY

AP2607AGY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V Small Package Outline RDS(ON) 52m Surface Mount Device ID -5AG Halogen Free & RoHS Compliant ProductSSDDescriptionDAdvanced Power MOSFETs utilized advanced processing techniquesGto achieve the lowest possible

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IPB049N06L3 | AP10TN028YT | AP2609GYT | 2SK3827 | AP2304GN | VS4612GE | PK650DY

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