All MOSFET. AP9992GR Datasheet

 

AP9992GR MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP9992GR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 165 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 930 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO262

 AP9992GR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP9992GR Datasheet (PDF)

 ..1. Size:233K  ape
ap9992gr.pdf

AP9992GR
AP9992GR

AP9992GR-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 165AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theThe Advanced Power MOSFETs from APEC provide

 0.1. Size:132K  ape
ap9992gr-hf.pdf

AP9992GR
AP9992GR

AP9992GR-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 165AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theThe Advanced Power MOSFETs from APEC provide

 7.1. Size:59K  ape
ap9992gp-hf.pdf

AP9992GR
AP9992GR

AP9992GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 165AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theThe Advanced Power MOSFETs from APEC provide thedesigner wit

 7.2. Size:56K  ape
ap9992gi-hf.pdf

AP9992GR
AP9992GR

AP9992GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 84AG RoHS Compliant & Halogen-FreeSDescriptionAP9992 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

 7.3. Size:55K  ape
ap9992gp-a-hf.pdf

AP9992GR
AP9992GR

AP9992GP-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 2.99m Fast Switching Characteristic ID 180AG RoHS Compliant & Halogen-FreeSDescriptionAP9992 series are from Advanced Power innovated design andsilicon process technology to achieve the low

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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