AP9992GR MOSFET Datasheet: N-Ch, 60V, 165A. Full specification with pinout and replacement list

AP9992GR Specs and Replacement

Type Designator: AP9992GR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 166 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 165 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 115 nS

Cossⓘ - Output Capacitance: 930 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO262

AP9992GR substitution

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AP9992GR datasheet

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AP9992GR-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 165A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the The Advanced Power MOSFETs from APEC provide... See More ⇒

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AP9992GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 165A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the The Advanced Power MOSFETs from APEC provide the designer wit... See More ⇒

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AP9992GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 84A G RoHS Compliant & Halogen-Free S Description AP9992 series are from Advanced Power innovated design and silicon process technology to achieve the lowest ... See More ⇒