All MOSFET. AP95T07BGP Datasheet

 

AP95T07BGP Datasheet and Replacement


   Type Designator: AP95T07BGP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 138.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO220
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AP95T07BGP Datasheet (PDF)

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AP95T07BGP

AP95T07BGP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D BVDSS 75V Simple Drive Requirement RDS(ON) 5m Lower On-resistance RoHS Compliant & Halogen-Free ID 125AGSDescriptionAP95T07B series are from Advanced Power innovated designand silicon process technology to ac

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 ap95t07bgp-hf.pdf pdf_icon

AP95T07BGP

AP95T07BGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m RoHS Compliant & Halogen-Free ID 125AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistanc

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 ap95t07bgs-hf.pdf pdf_icon

AP95T07BGP

AP95T07BGS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m RoHS Compliant & Halogen-Free ID 125AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-Gresis

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 ap95t07agp.pdf pdf_icon

AP95T07BGP

AP95T07AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 4.8m RoHS Compliant & Halogen-Free ID3 170AGSDescriptionAP95T07A series are from Advanced Power innovated designand silicon process technology to achieve the lowest possibleon-resistance and f

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