All MOSFET. AP80SL990BI Datasheet

 

AP80SL990BI Datasheet and Replacement


   Type Designator: AP80SL990BI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 32.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.99 Ohm
   Package: TO220F
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AP80SL990BI Datasheet (PDF)

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AP80SL990BI

AP80SL990BIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL990B series are from Advanced Power innovated design andsilicon process technology to achieve the

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AP80SL990BI

AP80SL990BHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL990B series are from Advanced Power innovated design andGsilicon process technology to achieve t

 4.2. Size:181K  ape
 ap80sl990bjb.pdf pdf_icon

AP80SL990BI

AP80SL990BJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 800VD Fast Switching Characteristic RDS(ON) 0.99 Simple Drive Requirement ID3 5.7AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL990B series are from Advanced Power innovated design andsilicon process technology to achieve the

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 ap80sl400as.pdf pdf_icon

AP80SL990BI

AP80SL400ASHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 850VD Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID 12AG RoHS Compliant & Halogen-FreeSDescriptionAP80SL400A series are from Advanced Power innovated design andsilicon process technology to achieve

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