AP70WN2K8L MOSFET. Datasheet pdf. Equivalent

   Type Designator: AP70WN2K8L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO126F

AP70WN2K8L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS