AP70SL500AP Datasheet and Replacement
Type Designator: AP70SL500AP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 78.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 8.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 30 nC
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO220
AP70SL500AP substitution
AP70SL500AP Datasheet (PDF)
ap70sl500ap.pdf

AP70SL500APHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 750VD Fast Switching Characteristic RDS(ON) 0.5 Simple Drive Requirement ID3 8.8AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL500A series are from Advanced Power innovated design andsilicon process technology to achie
ap70sl500ajb.pdf

AP70SL500AJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 750VD Fast Switching Characteristic RDS(ON) 0.5 Simple Drive Requirement ID3 8.8AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL500A series are from Advanced Power innovated design andsilicon process technology to achi
ap70sl500ai.pdf

AP70SL500AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 750VD Fast Switching Characteristic RDS(ON) 0.5 Simple Drive Requirement ID3,4 8.8AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL500A series are from Advanced Power innovated design andsilicon process technology to ach
ap70sl500ah.pdf

AP70SL500AHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 750VD Fast Switching Characteristic RDS(ON) 0.5 Simple Drive Requirement ID3 8.8AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL500A series are from Advanced Power innovated design andGsilicon process technology to ac
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