All MOSFET. AP6P064J Datasheet

 

AP6P064J Datasheet and Replacement


   Type Designator: AP6P064J
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 33.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
   Package: TO251
 

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AP6P064J Datasheet (PDF)

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AP6P064J

AP6P064JHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andGDsilicon process technology to achieve the low

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AP6P064J

AP6P064JBHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

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 ap6p064i.pdf pdf_icon

AP6P064J

AP6P064IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID4 -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

 7.2. Size:204K  ape
 ap6p064h.pdf pdf_icon

AP6P064J

AP6P064HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design and GDSsilicon process technology to achieve the l

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Datasheet: AP70PN1R1I , AP6P090J , AP6P090H , AP6P070S , AP6P070P , AP6P070I , AP6P070H , AP6P064JB , 10N65 , AP6P064I , AP6P064H , AP6P025S , AP6P025P , AP6P025I , AP6P025H , AP6N8R2LMT , AP6N8R2ALH .

History: NCEP01T10G | FQD20N06TF | BSZ100N03LSG | PSMN7R0-60YS | SWP060R68E7T | GSM3019S | APT5018BFLLG

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