All MOSFET. AP6P025I Datasheet

 

AP6P025I MOSFET. Datasheet pdf. Equivalent

Type Designator: AP6P025I

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 31.2 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 26.8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 40 nS

Drain-Source Capacitance (Cd): 240 pF

Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm

Package: TO220F

AP6P025I Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP6P025I Datasheet (PDF)

1.1. ap6p025i.pdf Size:182K _a-power

AP6P025I AP6P025I

AP6P025I Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test D BVDSS -60V ▼ Simple Drive Requirement RDS(ON) 25mΩ ▼ Fast Switching Characteristic ID -26.8A G ▼ RoHS Compliant & Halogen-Free S Description AP6P025 series are from Advanced Power innovated design and silicon process technology to achieve the lowest

3.1. ap6p025h.pdf Size:204K _a-power

AP6P025I AP6P025I

AP6P025H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test D BVDSS -60V ▼ Simple Drive Requirement RDS(ON) 25mΩ ▼ Fast Switching Characteristic ID -40A G ▼ RoHS Compliant & Halogen-Free S Description AP6P025 series are from Advanced Power innovated design and G D silicon process technology to achieve the low

3.2. ap6p025m.pdf Size:67K _a-power

AP6P025I AP6P025I

AP6P025M Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test D BVDSS -60V ▼ Simple Drive Requirement RDS(ON) 25mΩ ▼ Fast Switching Characteristic ID3 -7.3A G ▼ RoHS Compliant & Halogen-Free S Description D D AP6P025 series are from Advanced Power innovated design and silicon D D process technology to achieve

 3.3. ap6p025p.pdf Size:165K _a-power

AP6P025I AP6P025I

AP6P025P Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test D BVDSS -60V ▼ Simple Drive Requirement RDS(ON) 25mΩ ▼ Fast Switching Characteristic ID -40A G ▼ RoHS Compliant & Halogen-Free S Description AP6P025 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po

3.4. ap6p025s.pdf Size:177K _a-power

AP6P025I AP6P025I

AP6P025S Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test D BVDSS -60V ▼ Simple Drive Requirement RDS(ON) 25mΩ ▼ Fast Switching Characteristic ID -40A G ▼ RoHS Compliant & Halogen-Free S Description AP6P025 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top