AP6N100J Datasheet and Replacement
Type Designator: AP6N100J
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 12.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 7.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 32 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO251
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AP6N100J Datasheet (PDF)
ap6n100jv.pdf

AP6N100JVHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 7.5AG RoHS Compliant & Halogen-FreeSDescriptionAP6N100 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
ap6n100h.pdf

AP6N100HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 7.5AG RoHS Compliant & Halogen-FreeSDescriptionGAP6N100 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology to a
ap6n1r7cdt.pdf

AP6N1R7CDTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD 100% Rg & UIS Test RDS(ON) 1.7m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeSDescription PDFN 5x6D D D DAP6N1R7C series are from Advanced Power innovated designand silicon process technology to achieve the l
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History: APT4014BVFRG | HM12N60 | NTR1P02LT1G | APT10021JFLL | AOB12N65L | AM4935P
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History: APT4014BVFRG | HM12N60 | NTR1P02LT1G | APT10021JFLL | AOB12N65L | AM4935P



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