AP6N100J MOSFET Datasheet: N-Ch, 60V, 7.5A. Full specification with pinout and replacement list

AP6N100J Specs and Replacement

Type Designator: AP6N100J

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 12.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO251

AP6N100J substitution

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AP6N100J datasheet

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AP6N100JV Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 7.5A G RoHS Compliant & Halogen-Free S Description AP6N100 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p... See More ⇒

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AP6N100H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 7.5A G RoHS Compliant & Halogen-Free S Description G AP6N100 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology to a... See More ⇒

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AP6N10MI 100V N-Channel Enhancement Mode MOSFET Description The AP6N10MI uses advanced Trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =6A DS D R ... See More ⇒

Detailed specifications: AP6N3R2P, AP6N3R1LH, AP6N3R0LMT, AP6N2R0P, AP6N2R0I, AP6N2R0CDT, AP6N1R7CDT, AP6N100JV, MMIS60R580P, AP6N100H, AP6N023H, AP6C036H, AP6982GN2, AP6980GN2, AP6942GMT, AP6926GMT, AP6923GMT