All MOSFET. AP6N100J Datasheet

 

AP6N100J Datasheet and Replacement


   Type Designator: AP6N100J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 12.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO251
 

 AP6N100J substitution

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AP6N100J Datasheet (PDF)

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AP6N100J

AP6N100JVHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 7.5AG RoHS Compliant & Halogen-FreeSDescriptionAP6N100 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

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 ap6n100h.pdf pdf_icon

AP6N100J

AP6N100HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 7.5AG RoHS Compliant & Halogen-FreeSDescriptionGAP6N100 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology to a

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AP6N100J

AP6N10MI 100V N-Channel Enhancement Mode MOSFET Description The AP6N10MI uses advanced Trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =6A DS DR

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Datasheet: AP6N3R2P , AP6N3R1LH , AP6N3R0LMT , AP6N2R0P , AP6N2R0I , AP6N2R0CDT , AP6N1R7CDT , AP6N100JV , MMIS60R580P , AP6N100H , AP6N023H , AP6C036H , AP6982GN2 , AP6980GN2 , AP6942GMT , AP6926GMT , AP6923GMT .

Keywords - AP6N100J MOSFET datasheet

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