AP6N100H MOSFET. Datasheet pdf. Equivalent

   Type Designator: AP6N100H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 12.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO252

AP6N100H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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