All MOSFET. AP65WN770P Datasheet

 

AP65WN770P Datasheet and Replacement


   Type Designator: AP65WN770P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 138.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.77 Ohm
   Package: TO220
 

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AP65WN770P Datasheet (PDF)

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AP65WN770P

AP65WN770PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN770 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-

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AP65WN770P

AP65WN770IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN770 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-

 5.2. Size:211K  ape
ap65wn770in.pdf pdf_icon

AP65WN770P

AP65WN770INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN770 series are from the innovated design and siliconprocess technology to achieve the lowest possible on

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AP65WN770P

AP65WN2K3IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.29 Simple Drive Requirement ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN2K3 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

Datasheet: AP6N023H , AP6C036H , AP6982GN2 , AP6980GN2 , AP6942GMT , AP6926GMT , AP6923GMT , AP6679BGP , IRF840 , AP65WN770IN , AP65WN770I , AP65WN470I , AP65WN2K3L , AP65WN2K3I , AP65WN2K3H , AP65WN1K5S , AP65WN1K5I .

History: STD50NH02LT4 | AM2394NE | APT6029BLL | APT38N60BC6 | AO6404 | CEU06N7 | 2SK1014

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