AP65SL600AJ MOSFET. Datasheet pdf. Equivalent
Type Designator: AP65SL600AJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 62.5 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 20 nS
Drain-Source Capacitance (Cd): 28 pF
Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm
Package: TO251
AP65SL600AJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP65SL600AJ Datasheet (PDF)
1.1. ap65sl600aj.pdf 
Size:202K _a-power
AP65SL600AJ Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test VDS @ Tj,max. 700V D ▼ Fast Switching Characteristic RDS(ON) 0.6Ω ▼ Simple Drive Requirement ID 7A G ▼ RoHS Compliant & Halogen-Free S Description AP65SL600A series are from Advanced Power innovated design and G D S TO-251(J) silicon process tec
1.2. ap65sl600ah.pdf Size:237K _a-power
AP65SL600AH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test VDS @ Tj,max. 700V D ▼ Fast Switching Characteristic RDS(ON) 0.6Ω ▼ Simple Drive Requirement ID 7A G ▼ RoHS Compliant & Halogen-Free S Description AP65SL600A series are from Advanced Power innovated design and G silicon process technology to achie
1.3. ap65sl600ai.pdf Size:215K _a-power
AP65SL600AI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test VDS @ Tj,max. 700V D ▼ Fast Switching Characteristic RDS(ON) 0.6Ω ▼ Simple Drive Requirement ID 7A G ▼ RoHS Compliant & Halogen-Free S Description AP65SL600A series are from Advanced Power innovated design and silicon process technology to achieve
1.4. ap65sl600dh.pdf Size:237K _a-power
AP65SL600DH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 650V D ▼ Fast Switching Characteristic RDS(ON) 0.6Ω ▼ Simple Drive Requirement ID3 7A G ▼ RoHS Compliant & Halogen-Free S Description AP65SL600D series are from Advanced Power innovated design and G D silicon process technology to achieve t
1.5. ap65sl600ain.pdf Size:251K _a-power
AP65SL600AIN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test VDS @ Tj,max. 700V D ▼ Fast Switching Characteristic RDS(ON) 0.6Ω ▼ Simple Drive Requirement ID 7A G ▼ RoHS Compliant & Halogen-Free S Description AP65SL600A series are from Advanced Power innovated design and silicon process technology to achieve
1.6. ap65sl600ar.pdf Size:202K _a-power
AP65SL600AR Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test VDS @ Tj,max. 700V D ▼ Fast Switching Characteristic RDS(ON) 0.6Ω ▼ Simple Drive Requirement ID3 7A G ▼ RoHS Compliant & Halogen-Free S Description AP65SL600A series are from Advanced Power innovated design and silicon process technology to achieve
1.7. ap65sl600di.pdf Size:214K _a-power
AP65SL600DI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 650V D ▼ Fast Switching Characteristic RDS(ON) 0.6Ω ▼ Simple Drive Requirement ID 7A G ▼ RoHS Compliant & Halogen-Free S Description AP65SL600D series are from Advanced Power innovated design and silicon process technology to achieve the lowe
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