AP65SL600AH Datasheet and Replacement
Type Designator: AP65SL600AH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 28 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO252
AP65SL600AH substitution
AP65SL600AH Datasheet (PDF)
ap65sl600ah.pdf

AP65SL600AHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL600A series are from Advanced Power innovated design andGsilicon process technology to achie
ap65sl600ai.pdf

AP65SL600AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL600A series are from Advanced Power innovated design andsilicon process technology to achieve
ap65sl600aj.pdf

AP65SL600AJHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL600A series are from Advanced Power innovated design and GDSTO-251(J)silicon process tec
ap65sl600ar.pdf

AP65SL600ARHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL600A series are from Advanced Power innovated design andsilicon process technology to achieve
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History: SQJ401EP | SFP730D



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