IRFI530N Datasheet and Replacement
Type Designator: IRFI530N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 44(max) nC
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO220F
IRFI530N Datasheet (PDF)
irfi530n.pdf
PD - 9.1353AIRFI530NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.11 Fully Avalanche RatedGID = 12ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible
irfi530npbf.pdf
PD - 95419IRFI530NPbFHEXFET Power MOSFETl Advanced Process Technologyl Isolated PackageDl High Voltage Isolation = 2.5KVRMS VDSS = 100Vl Sink to Lead Creepage Dist. = 4.8mml Fully Avalanche RatedRDS(on) = 0.11l Lead-Free GID = 12ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest
irfi530npbf.pdf
IRFI530NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 100V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.11 Fully Avalanche Rated Lead-Free ID 12A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low
Datasheet: IRFI3710 , IRFI460 , IRFI4905 , IRFI510A , IRFI520A , IRFI520N , IRFI5210 , IRFI530A , 4435 , IRFI540A , IRFI540N , IRFI550A , IRFI610A , IRFI614A , IRFI614G , IRFI620A , IRFI620G .
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