All MOSFET. AP60WN4K9J Datasheet

 

AP60WN4K9J Datasheet and Replacement


   Type Designator: AP60WN4K9J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.9 Ohm
   Package: TO251
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AP60WN4K9J Datasheet (PDF)

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AP60WN4K9J

AP60WN4K9JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionGAP60WN4K9 series are from the innovated design and siliconDSTO-251(J)process technology to achieve the l

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AP60WN4K9J

AP60WN4K9HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K9 series are from the innovated design and siliconGprocess technology to achieve the lowest possible on

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 ap60wn4k9i.pdf pdf_icon

AP60WN4K9J

AP60WN4K9IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K9 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

 5.3. Size:135K  ape
 ap60wn4k9k.pdf pdf_icon

AP60WN4K9J

AP60WN4K9KHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDDescriptionSAP60WN4K9 series are from the innovated design and siliconDprocess technology to achieve the lowest possi

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History: SWSI2N40DC | AON6794 | BUZ84 | CED05N8 | BL20N65-A | IRLR024 | BL10N70-A

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