AP60WN2K3I Specs and Replacement
Type Designator: AP60WN2K3I
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 35 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.37 Ohm
Package: TO220F
AP60WN2K3I substitution
- MOSFET ⓘ Cross-Reference Search
AP60WN2K3I datasheet
ap60wn2k3i.pdf
AP60WN2K3I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 2.37 Fast Switching Characteristic ID3 4A G RoHS Compliant & Halogen-Free S Description AP60WN2K3 series are from the innovated design and silicon process technology to achieve the lowest possible on-r... See More ⇒
ap60wn2k3h.pdf
AP60WN2K3H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 2.37 Fast Switching Characteristic ID3 4A G RoHS Compliant & Halogen-Free S Description AP60WN2K3 series are from the innovated design and silicon G process technology to achieve the lowest possible o... See More ⇒
ap60wn2k1h.pdf
AP60WN2K1H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description AP60WN2K1 series are from the innovated design and silicon G process technology to achieve the lowest possible o... See More ⇒
ap60wn2k1j.pdf
AP60WN2K1J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description G AP60WN2K1 series are from the innovated design and silicon D S TO-251(J) process technology to achieve the ... See More ⇒
Detailed specifications: AP60WN720I, AP60WN650I, AP60WN4K9P, AP60WN4K9J, AP60WN4K9I, AP60WN4K9H, AP60WN4K5I, AP60WN4K5H, 18N50, AP60WN2K3H, AP60WN2K1J, AP60WN2K1I, AP60WN2K1H, AP60WN1K5J, AP60WN1K5I, AP60WN1K5H, AP60WN1K2J
Keywords - AP60WN2K3I MOSFET specs
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