All MOSFET. AP60SL300AFI Datasheet

 

AP60SL300AFI Datasheet and Replacement


   Type Designator: AP60SL300AFI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 10.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 39 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO220F
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AP60SL300AFI Datasheet (PDF)

 ..1. Size:177K  ape
ap60sl300afi.pdf pdf_icon

AP60SL300AFI

AP60SL300AFIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.3 Simple Drive Requirement ID3 10.5AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL300AF series are from Advanced Power innovated designand silicon process technology to achieve th

 7.1. Size:242K  ape
ap60sl380ah.pdf pdf_icon

AP60SL300AFI

AP60SL380AHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 0.38 Simple Drive Requirement ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL380A series are from Advanced Power innovated design andGsilicon process technology to ac

 8.1. Size:201K  ape
ap60sl600aj.pdf pdf_icon

AP60SL300AFI

AP60SL600AJHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionGAP60SL600A series are from Advanced Power innovated design andDSTO-251(J)silicon process t

 8.2. Size:252K  ape
ap60sl600ain.pdf pdf_icon

AP60SL300AFI

AP60SL600AINHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3,4 7AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL600A series are from Advanced Power innovated design andsilicon process technology to achi

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History: AP4513GH

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