All MOSFET. AP50WN1K5P Datasheet

 

AP50WN1K5P Datasheet and Replacement


   Type Designator: AP50WN1K5P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm
   Package: TO220
 

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AP50WN1K5P Datasheet (PDF)

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AP50WN1K5P

AP50WN1K5PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

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AP50WN1K5P

AP50WN1K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

 5.2. Size:198K  ape
 ap50wn1k5h.pdf pdf_icon

AP50WN1K5P

AP50WN1K5HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K5 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o

 6.1. Size:175K  ape
 ap50wn1k0i.pdf pdf_icon

AP50WN1K5P

AP50WN1K0IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.03 Fast Switching Characteristic ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K0 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

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Datasheet: AP50WN750P , AP50WN750I , AP50WN650I , AP50WN520P , AP50WN520I , AP50WN270W , AP50WN270IN , AP50WN270I , IRFP260N , AP50WN1K5I , AP50WN1K5H , AP50WN1K0I , AP50WN1K0H , AP50T10GS , AP50T10GP , AP50T10GJ , AP50T10GI .

History: 2SJ320

Keywords - AP50WN1K5P MOSFET datasheet

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