AP4N3R6P MOSFET. Datasheet pdf. Equivalent
Type Designator: AP4N3R6P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 120 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 900 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO220
AP4N3R6P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP4N3R6P Datasheet (PDF)
ap4n3r6p.pdf
AP4N3R6PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 3.6m Fast Switching Characteristic ID 125AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP4N3R6 seriesare fromAdvanced Power innova
ap4n3r6h.pdf
AP4N3R6HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 3.6m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionGAP4604 series arefrom Advanced Power innovated designAP4N3R6 seriesare fromAdvanced Power innovated d
ap4n3r2mt.pdf
AP4N3R2MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 40VD Simple Drive Requirement RDS(ON) 3.2m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP4N3R2 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po
ap4n3r2i.pdf
AP4N3R2IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 3.2m Fast Switching Characteristic ID 75AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are fromAdvanced Powerinnovated designAP4N3R2 series arefrom AdvancedPower innovate
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918