AP4N2R6H Datasheet. Specs and Replacement
Type Designator: AP4N2R6H 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 720 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: TO252
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AP4N2R6H substitution
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AP4N2R6H datasheet
ap4n2r6h.pdf
AP4N2R6H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S Description G AP4604 series arefrom Advanced Power innovated design AP4N2R6 seriesare fromAdvanced Power innovated d... See More ⇒
ap4n2r6amt.pdf
AP4N2R6AMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 40V D Simple Drive Requirement RDS(ON) 2.6m Ultra Low On-resistance G RoHS Compliant & Halogen-Free D S D D Description D AP4N2R6A series are from Advanced Power innovated design and silicon process technology to achieve the lowest ... See More ⇒
ap4n2r6p.pdf
AP4N2R6P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP4N2R6 seriesare fromAdvanced Power innovated desi... See More ⇒
ap4n2r6mt.pdf
AP4N2R6MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 40V D Simple Drive Requirement RDS(ON) 2.6m Ultra Low On-resistance ID4 150A G RoHS Compliant & Halogen-Free D S D D Description D AP4N2R6 series are from Advanced Power innovated design and silicon process technology to achieve the ... See More ⇒
Detailed specifications: AP4N3R6P, AP4N3R6H, AP4N3R2MT, AP4N3R2I, AP4N2R6S, AP4N2R6P, AP4N2R6MT, AP4N2R6J, AON7410, AP4N2R6AMT, AP4N1R8CMT-A, AP4N1R1CDT-A, AP4820AGYT, AP4804MT, AP4800N2, AP4618CDT, AP4610P
Keywords - AP4N2R6H MOSFET specs
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