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AP4606P Spec and Replacement


   Type Designator: AP4606P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 830 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: TO220

 AP4606P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP4606P Specs

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AP4606P

AP4606P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 3.7m Fast Switching Characteristic ID3 125A G RoHS Compliant & Halogen-Free S Description AP4606 series are from Advanced Power innovated design and silicon process technology to achieve the lowes... See More ⇒

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AP4606P

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AP4606P

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AP4606P

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Detailed specifications: AP4N1R1CDT-A , AP4820AGYT , AP4804MT , AP4800N2 , AP4618CDT , AP4610P , AP4608S , AP4608P , IRFP450 , AP4604P , AP4604IN , AP4604I , AP4604AI , AP4563GH , AP4563AGH , AP4455GYT , AP4453H .

Keywords - AP4606P MOSFET specs

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