AP4606P Datasheet. Specs and Replacement

Type Designator: AP4606P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 830 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm

Package: TO220

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AP4606P datasheet

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AP4606P

AP4606P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 3.7m Fast Switching Characteristic ID3 125A G RoHS Compliant & Halogen-Free S Description AP4606 series are from Advanced Power innovated design and silicon process technology to achieve the lowes... See More ⇒

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Detailed specifications: AP4N1R1CDT-A, AP4820AGYT, AP4804MT, AP4800N2, AP4618CDT, AP4610P, AP4608S, AP4608P, IRFP450, AP4604P, AP4604IN, AP4604I, AP4604AI, AP4563GH, AP4563AGH, AP4455GYT, AP4453H

Keywords - AP4606P MOSFET specs

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