IRFI630A MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFI630A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 72 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 95 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO262
IRFI630A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFI630A Datasheet (PDF)
irfi630g.pdf
PD - 94846IRFI630GPbF Lead-Free11/14/03Document Number: 91148 www.vishay.com1IRFI630GPbFDocument Number: 91148 www.vishay.com2IRFI630GPbFDocument Number: 91148 www.vishay.com3IRFI630GPbFDocument Number: 91148 www.vishay.com4IRFI630GPbFDocument Number: 91148 www.vishay.com5IRFI630GPbFDocument Number: 91148 www.vishay.com6IRFI630GPbFTO-220 Full
irfw630b irfi630b.pdf
IRFW630B / IRFI630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switc
irfi630g sihfi630g.pdf
IRFI630G, SiHFI630GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.40f = 60 Hz)RoHS*Qg (Max.) (nC) 43COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Low Thermal ResistanceConfiguration S
Datasheet: IRFI550A , IRFI610A , IRFI614A , IRFI614G , IRFI620A , IRFI620G , IRFI624A , IRFI624G , AO3400 , IRFI630G , IRFI634A , IRFI634G , IRFI640A , IRFI640G , IRFI644A , IRFI644G , IRFI710A .
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