AP4024EH
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP4024EH
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 36.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 60
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 17
nC
trⓘ - Rise Time: 65
nS
Cossⓘ -
Output Capacitance: 260
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006
Ohm
Package:
TO252
AP4024EH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP4024EH
Datasheet (PDF)
..1. Size:202K ape
ap4024eh.pdf
AP4024EHHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30VD Simple Drive Requirement RDS(ON) 6mG Fast Switching Characteristic ID 60A RoHS Compliant & Halogen-FreeSDescriptionAP4024 series are from Advanced Power innovated desig
7.1. Size:143K ape
ap4024eyt.pdf
AP4024EYTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 4.5m RoHS Compliant & Halogen-Free ID 20.7AGS DDDescriptionDDAP4024 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-resi
7.2. Size:186K ape
ap4024em.pdf
AP4024EMHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 4.5mD Low On-resistance ID 18.5AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP4024E series are from Advanced Power innovated design andGsilicon process technol
7.3. Size:147K ape
ap4024ejb.pdf
AP4024EJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VD Simple Drive Requirement RDS(ON) 6mG Fast Switching Characteristic ID 60A RoHS Compliant & Halogen-FreeSDescriptionAP4024 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possi
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