AP3P010YT Spec and Replacement
Type Designator: AP3P010YT
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3.12 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: PMPAK3X3
AP3P010YT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP3P010YT Specs
ap3p010yt.pdf
AP3P010YT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID -14.6A RoHS Compliant & Halogen-Free G S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ... See More ⇒
ap3p010amt.pdf
AP3P010AMT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58A RoHS Compliant & Halogen-Free G S D Description D D AP3P010A series are from Advanced Power innovated design and D silicon process technology to achiev... See More ⇒
ap3p010h.pdf
AP3P010H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58A G RoHS Compliant & Halogen-Free S Description G AP3P010 series are from Advanced Power innovated design and D S silicon process technology to achieve the lowes... See More ⇒
ap3p010m.pdf
AP3P010M Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS -30V Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID3 -13.3A G RoHS Compliant & Halogen-Free S Description D D AP3P010 series are from Advanced Power innovated design and silicon D D process technology to achieve t... See More ⇒
Detailed specifications: AP3R604GMT-L , AP3R303GMT-L , AP3R303GMT , AP3P9R0I , AP3N1R7CYT , AP3P2R2CDT , AP3NR68CDT , AP2604CDT , IRF830 , AP3N018EYT , AP3C030YT , AP3800YT , AP3700YT , AP2P9R0LYT , AP2N3R7LYT , AP2609GYT , AP15TP1R0YT .
Keywords - AP3P010YT MOSFET specs
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