AP3N020P PDF and Equivalents Search

 

AP3N020P Specs and Replacement

Type Designator: AP3N020P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 17.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO220

AP3N020P substitution

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AP3N020P datasheet

 ..1. Size:202K  ape
ap3n020p.pdf pdf_icon

AP3N020P

AP3N020P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 23.3A G G RoHS Compliant & Halogen-Free S S Description AP4604 seriesare fromAdvanced Power innovated design AP3N020series arefrom Advanced Power innovated de... See More ⇒

 8.1. Size:71K  ape
ap3n028ey.pdf pdf_icon

AP3N020P

AP3N028EY Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Simple Drive Requirement BVDSS 30V D Lower Gate Charge D RDS(ON) 28m Fast Switching Performance ID 7A G D RoHS Compliant & Halogen-Free D SOT-26 D Description AP3N028E series are from Advanced Power innovated design and silicon G process technology to ach... See More ⇒

 8.2. Size:154K  ape
ap3n028en.pdf pdf_icon

AP3N020P

AP3N028EN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Lower Gate Charge RDS(ON) 28m Fast Switching Performance ID 5.4A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP3N028E series are from Advanced Power innovated design and silicon G process technology to achieve ... See More ⇒

 9.1. Size:151K  ape
ap3n035n.pdf pdf_icon

AP3N020P

AP3N035N Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30V D Lower Gate Charge RDS(ON) 35m Fast Switching Performance ID 4.5A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP3N035 series are from Advanced Power innovated design and silicon process technology to achieve the... See More ⇒

Detailed specifications: AP0203GMT, AP3N2R2MT-L, AP10TN008CMT-L, AP0203GMT-L, AP3P7R0EP, AP3N4R0P, AP3N2R8P, AP3N1R8P, IRFP260, AP3P7R0EI, AP3N4R0J, AP3P7R0EJB, AP3P7R0EH, AP3P050H, AP3P010H, AP3N4R5H, AP3N4R0H

Keywords - AP3N020P MOSFET specs

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