All MOSFET. AP3P6R0S Datasheet

 

AP3P6R0S Datasheet and Replacement


   Type Designator: AP3P6R0S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 69.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 1050 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO263
 

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AP3P6R0S Datasheet (PDF)

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AP3P6R0S

AP3P6R0SHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID3 -80AG RoHS Compliant & Halogen-FreeSDescriptionAP3P6R0 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest pos

Datasheet: AP3P7R0EJB , AP3P7R0EH , AP3P050H , AP3P010H , AP3N4R5H , AP3N4R0H , AP3N2R8H , AP3P7R0ES , IRLZ44N , AP3N4R0S , AP3C010H , AP3A020Y , AP3990S , AP3700Y , AP30T10GS , AP30T10GI , AP30T10GH .

History: IRFU9010PBF | NCE60N1K0K | AM9435P | AP6N3R0LMT | AUIRF4104STRL | APT4014BVFRG | 2N90L-TN3-R

Keywords - AP3P6R0S MOSFET datasheet

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