AP3P6R0S Specs and Replacement
Type Designator: AP3P6R0S
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 69.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 1050 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO263
AP3P6R0S substitution
- MOSFET ⓘ Cross-Reference Search
AP3P6R0S datasheet
ap3p6r0s.pdf
AP3P6R0S Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID3 -80A G RoHS Compliant & Halogen-Free S Description AP3P6R0 series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos... See More ⇒
Detailed specifications: AP3P7R0EJB, AP3P7R0EH, AP3P050H, AP3P010H, AP3N4R5H, AP3N4R0H, AP3N2R8H, AP3P7R0ES, AON6380, AP3N4R0S, AP3C010H, AP3A020Y, AP3990S, AP3700Y, AP30T10GS, AP30T10GI, AP30T10GH
Keywords - AP3P6R0S MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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