All MOSFET. AP3P6R0S Datasheet

 

AP3P6R0S MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP3P6R0S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 69.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 54 nC
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 1050 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO263

 AP3P6R0S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP3P6R0S Datasheet (PDF)

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 ap3p6r0s.pdf

AP3P6R0S AP3P6R0S

AP3P6R0SHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID3 -80AG RoHS Compliant & Halogen-FreeSDescriptionAP3P6R0 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest pos

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: HRLO110N03K

 

 
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