AP3P6R0S Datasheet and Replacement
Type Designator: AP3P6R0S
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 69.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 1050 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO263
AP3P6R0S substitution
AP3P6R0S Datasheet (PDF)
ap3p6r0s.pdf

AP3P6R0SHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID3 -80AG RoHS Compliant & Halogen-FreeSDescriptionAP3P6R0 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest pos
Datasheet: AP3P7R0EJB , AP3P7R0EH , AP3P050H , AP3P010H , AP3N4R5H , AP3N4R0H , AP3N2R8H , AP3P7R0ES , AON7506 , AP3N4R0S , AP3C010H , AP3A020Y , AP3990S , AP3700Y , AP30T10GS , AP30T10GI , AP30T10GH .
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History: TPC8027 | IRFP242



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