IRFI710A Specs and Replacement
Type Designator: IRFI710A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ -
Output Capacitance: 35 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm
Package: TO262
- MOSFET ⓘ Cross-Reference Search
IRFI710A datasheet
7.1. Size:667K fairchild semi
irfw710b irfi710b.pdf 
November 2001 IRFW710B / IRFI710B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.7 nC) planar, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especially tailored t... See More ⇒
9.5. Size:988K international rectifier
irfi744gpbf.pdf
PD - 94855 IRFI744GPbF Lead-Free 11/19/03 Document Number 91157 www.vishay.com 1 IRFI744GPbF Document Number 91157 www.vishay.com 2 IRFI744GPbF Document Number 91157 www.vishay.com 3 IRFI744GPbF Document Number 91157 www.vishay.com 4 IRFI744GPbF Document Number 91157 www.vishay.com 5 IRFI744GPbF Document Number 91157 www.vishay.com 6 IRFI744GPbF Document Nu... See More ⇒
9.6. Size:925K international rectifier
irfi740g.pdf
PD - 94854 IRFI740GPbF Lead-Free 11/19/03 Document Number 91156 www.vishay.com 1 IRFI740GPbF Document Number 91156 www.vishay.com 2 IRFI740GPbF Document Number 91156 www.vishay.com 3 IRFI740GPbF Document Number 91156 www.vishay.com 4 IRFI740GPbF Document Number 91156 www.vishay.com 5 IRFI740GPbF Document Number 91156 www.vishay.com 6 IRFI740GPbF TO-220 Full... See More ⇒
9.7. Size:258K international rectifier
irfi734gpbf.pdf
PD- 95752 IRFI734GPbF Lead-Free 8/23/04 Document Number 91154 www.vishay.com 1 IRFI734GPbF Document Number 91154 www.vishay.com 2 IRFI734GPbF Document Number 91154 www.vishay.com 3 IRFI734GPbF Document Number 91154 www.vishay.com 4 IRFI734GPbF Document Number 91154 www.vishay.com 5 IRFI734GPbF Document Number 91154 www.vishay.com 6 IRFI734GPbF Peak Diode Re... See More ⇒
9.9. Size:540K international rectifier
irfi7440gpbf.pdf
StrongIRFET IRFI7440GPbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 40V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.0m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 2.5m Resonant mode power supplies S OR-ing and redu... See More ⇒
9.11. Size:566K international rectifier
irfi7446gpbf.pdf
StrongIRFET IRFI7446GPbF HEXFET Power MOSFET Application Brushed motor drive applications D VDSS 40V BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.3m Resonant mode power supplies S OR-ing and redu... See More ⇒
9.12. Size:917K international rectifier
irfi730g.pdf
PD - 94987 IRFI730GPbF Lead-Free 2/9/04 Document Number 91153 www.vishay.com 1 IRFI730GPbF Document Number 91153 www.vishay.com 2 IRFI730GPbF Document Number 91153 www.vishay.com 3 IRFI730GPbF Document Number 91153 www.vishay.com 4 IRFI730GPbF Document Number 91153 www.vishay.com 5 IRFI730GPbF Document Number 91153 www.vishay.com 6 IRFI730GPbF TO-220 Full-P... See More ⇒
9.14. Size:679K fairchild semi
irfw740b irfi740b.pdf
November 2001 IRFW740B / IRFI740B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially tailored to ... See More ⇒
9.15. Size:666K fairchild semi
irfw720b irfi720b.pdf
November 2001 IRFW720B / IRFI720B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 14 nC) planar, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to... See More ⇒
9.16. Size:1583K vishay
irfi740g sihfi740g.pdf
IRFI740G, SiHFI740G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.55 f = 60 Hz) RoHS* Qg (Max.) (nC) 66 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 33 Low Thermal Resistance Configuration Sin... See More ⇒
9.17. Size:1709K vishay
irfi744gpbf.pdf
IRFI744G, SiHFI744G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 450 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.63 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 80 Sink to Lead Creepage Dist. = 4.8 mm Qgs (nC) 12 Dynamic dV/dt Rating Qgd (nC) 41 Low Thermal Resistance Lead (Pb)-free Av... See More ⇒
9.18. Size:1544K vishay
irfi730g sihfi730g.pdf
IRFI730G, SiHFI730G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 1.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qgs (nC) 5.7 Dynamic dV/dt Rating Qgd (nC) 22 Low Thermal Resistance Lead (Pb)-free... See More ⇒
9.19. Size:1499K vishay
irfi720g sihfi720g.pdf
IRFI720G, SiHFI720G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 1.8 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 20 COMPLIANT Dynamic dV/dt Rating Qgs (nC) 3.3 Low Thermal Resistance Qgd (nC) 11 Lead (Pb)-fre... See More ⇒
9.20. Size:1296K vishay
irfi740glc sihfi740glc.pdf
IRFI740GLC, SiHFI740GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.55 Enhanced 30 V VGS Rating RoHS* Isolated Package Qg (Max.) (nC) 39 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s, Qgs (nC) 10 f = 60 Hz) Qgd (nC) 19 Sink to Lead C... See More ⇒
9.21. Size:846K vishay
irfi734gpbf.pdf
IRFI734G, SiHFI734G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 450 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = 10 V 1.2 Sink to Lead Creepage Dist. 4.8 mm Qg (Max.) (nC) 45 Dynamic dV/dt Qgs (nC) 6.6 Low Thermal Resistance Qgd (nC) 24 Lead (Pb)-free Configuration Single DESCRIPTION D ... See More ⇒
9.22. Size:1741K vishay
irfi744g sihfi744g.pdf
IRFI744G, SiHFI744G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 450 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.63 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 80 Sink to Lead Creepage Dist. = 4.8 mm Qgs (nC) 12 Dynamic dV/dt Rating Qgd (nC) 41 Low Thermal Resistance Lead (Pb)-free Av... See More ⇒
9.23. Size:602K infineon
irfi7536gpbf.pdf
IRFI7536GPbF HEXFET Power MOSFET Applications VDSS 60V High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply RDS(on) typ. 2.7m High Speed Power Switching Hard Switched and High Frequency Circuits RDS(on) max. 3.4m ID 86A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capaci... See More ⇒
9.24. Size:201K inchange semiconductor
irfi7440g.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI7440G FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(... See More ⇒
9.25. Size:201K inchange semiconductor
irfi7446g.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI7446G FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(... See More ⇒
9.26. Size:201K inchange semiconductor
irfi7536g.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI7536G FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(... See More ⇒
Detailed specifications: IRFI630A, IRFI630G, IRFI634A, IRFI634G, IRFI640A, IRFI640G, IRFI644A, IRFI644G, 8N60, IRFI720A, IRFI720G, IRFI730A, IRFI730G, IRFI734G, IRFI740A, IRFI740G, IRFI740GLC
Keywords - IRFI710A MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
