All MOSFET. IRFI730G Datasheet

 

IRFI730G MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFI730G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 38(max) nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO220F

 IRFI730G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFI730G Datasheet (PDF)

 ..1. Size:917K  international rectifier
 irfi730g.pdf

IRFI730G IRFI730G

PD - 94987IRFI730GPbF Lead-Free2/9/04Document Number: 91153 www.vishay.com1IRFI730GPbFDocument Number: 91153 www.vishay.com2IRFI730GPbFDocument Number: 91153 www.vishay.com3IRFI730GPbFDocument Number: 91153 www.vishay.com4IRFI730GPbFDocument Number: 91153 www.vishay.com5IRFI730GPbFDocument Number: 91153 www.vishay.com6IRFI730GPbFTO-220 Full-P

 ..2. Size:1544K  vishay
 irfi730g sihfi730g.pdf

IRFI730G IRFI730G

IRFI730G, SiHFI730GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 1.0f = 60 Hz)RoHS*Qg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQgs (nC) 5.7 Dynamic dV/dt RatingQgd (nC) 22 Low Thermal Resistance Lead (Pb)-free

 7.1. Size:117K  1
 irfi730a irfw730a.pdf

IRFI730G IRFI730G

 8.1. Size:258K  international rectifier
 irfi734gpbf.pdf

IRFI730G IRFI730G

PD- 95752IRFI734GPbF Lead-Free8/23/04Document Number: 91154 www.vishay.com1IRFI734GPbFDocument Number: 91154 www.vishay.com2IRFI734GPbFDocument Number: 91154 www.vishay.com3IRFI734GPbFDocument Number: 91154 www.vishay.com4IRFI734GPbFDocument Number: 91154 www.vishay.com5IRFI734GPbFDocument Number: 91154 www.vishay.com6IRFI734GPbFPeak Diode Re

 8.2. Size:241K  international rectifier
 irfi734g.pdf

IRFI730G IRFI730G

 8.3. Size:846K  vishay
 irfi734gpbf.pdf

IRFI730G IRFI730G

IRFI734G, SiHFI734GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 450 High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = 10 V 1.2 Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 45 Dynamic dV/dtQgs (nC) 6.6 Low Thermal ResistanceQgd (nC) 24 Lead (Pb)-free Configuration SingleDESCRIPTIOND

Datasheet: IRFI640A , IRFI640G , IRFI644A , IRFI644G , IRFI710A , IRFI720A , IRFI720G , IRFI730A , AO3401 , IRFI734G , IRFI740A , IRFI740G , IRFI740GLC , IRFI744G , IRFI820A , IRFI820G , IRFI830A .

 

 
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