AP10N9R0I PDF and Equivalents Search

 

AP10N9R0I Specs and Replacement

Type Designator: AP10N9R0I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 44 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 97 nS

Cossⓘ - Output Capacitance: 870 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm

Package: TO220F

AP10N9R0I substitution

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AP10N9R0I datasheet

 ..1. Size:219K  ape
ap10n9r0i.pdf pdf_icon

AP10N9R0I

AP10N9R0I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 8.9m Fast Switching Characteristic ID 44A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from Advanced Powerinnovated design AP10N9R0 series are from AdvancedPower innovate... See More ⇒

 6.1. Size:207K  ape
ap10n9r0r.pdf pdf_icon

AP10N9R0I

AP10N9R0R Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 8.9m Fast Switching Characteristic ID 70A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from Advanced Powerinnovated design AP10N9R0 series are from AdvancedPower innovate... See More ⇒

 9.1. Size:218K  ape
ap10n4r5i.pdf pdf_icon

AP10N9R0I

AP10N4R5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 4.5m Fast Switching Characteristic ID 70A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from Advanced Powerinnovated design AP10N4R5 series are from AdvancedPower innovate... See More ⇒

 9.2. Size:189K  ape
ap10n70p.pdf pdf_icon

AP10N9R0I

AP10N70R/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G S Description G AP10N70 series are specially designed as main switching devices for D TO-262(R) S universal 90 265VAC off-line AC/DC converter applicati... See More ⇒

Detailed specifications: AP10TN040H, AP10TN003S, AP10TN003R, AP10TN003P, AP10TN003I, AP10P230H, AP10P10GJ, AP10N9R0R, AOD4184A, AP10N7R5H, AP10N6R0S, AP10N4R5S, AP10N4R5P, AP10N4R5I, AP10N012P, AP10N012IN, AP10N012I

Keywords - AP10N9R0I MOSFET specs

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