All MOSFET. AP05N20GH Datasheet

 

AP05N20GH Datasheet and Replacement


   Type Designator: AP05N20GH
   Marking Code: 05N20GH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   tr ⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO252
 

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AP05N20GH Datasheet (PDF)

 ..1. Size:61K  ape
 ap05n20gh j-hf.pdf pdf_icon

AP05N20GH

AP05N20GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-FreeGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with the DSTO-252(H)best combination of f

 ..2. Size:196K  ape
 ap05n20gh.pdf pdf_icon

AP05N20GH

AP05N20GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-FreeGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with the DSTO-252(H)best combination of f

 6.1. Size:164K  ape
 ap05n20gj.pdf pdf_icon

AP05N20GH

AP05N20GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-FreeGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with the DSTO-252(H)best combination of f

 6.2. Size:171K  ape
 ap05n20gi.pdf pdf_icon

AP05N20GH

AP05N20GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 200V Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID3 5.8AG RoHS Compliant & Halogen-FreeSDescriptionAP05N20 series are from Advanced Power innovated design andsilicon process technology to achieve the low

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History: ZVN0545GTC | HGK105N15M

Keywords - AP05N20GH MOSFET datasheet

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