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AP05N20GH Spec and Replacement


   Type Designator: AP05N20GH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO252

 AP05N20GH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP05N20GH Specs

 ..1. Size:61K  ape
 ap05n20gh j-hf.pdf pdf_icon

AP05N20GH

AP05N20GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-Free G S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of f... See More ⇒

 ..2. Size:196K  ape
 ap05n20gh.pdf pdf_icon

AP05N20GH

AP05N20GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-Free G S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of f... See More ⇒

 6.1. Size:164K  ape
 ap05n20gj.pdf pdf_icon

AP05N20GH

AP05N20GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-Free G S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of f... See More ⇒

 6.2. Size:171K  ape
 ap05n20gi.pdf pdf_icon

AP05N20GH

AP05N20GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 200V Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID3 5.8A G RoHS Compliant & Halogen-Free S Description AP05N20 series are from Advanced Power innovated design and silicon process technology to achieve the low... See More ⇒

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Detailed specifications: AP10C325Y , AP09T10GH , AP09N20BGH , AP0603GH , AP05N50EJ , AP05N50EH , AP05N20GJ , AP05N20GI , IRLZ44N , AP04N70BS-H , AP02N90JB , AP02N90J , AP02N90H , AP01L60T-H , AP01L60H-A-HF , AP01L60H-H , AP01L60J-A-HF .

History: IPP60R190P6 | AP02N90JB

Keywords - AP05N20GH MOSFET specs

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