All MOSFET. IRFI740G Datasheet

 

IRFI740G MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFI740G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 66(max) nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO220F

 IRFI740G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFI740G Datasheet (PDF)

 ..1. Size:925K  international rectifier
 irfi740g.pdf

IRFI740G IRFI740G

PD - 94854IRFI740GPbF Lead-Free11/19/03Document Number: 91156 www.vishay.com1IRFI740GPbFDocument Number: 91156 www.vishay.com2IRFI740GPbFDocument Number: 91156 www.vishay.com3IRFI740GPbFDocument Number: 91156 www.vishay.com4IRFI740GPbFDocument Number: 91156 www.vishay.com5IRFI740GPbFDocument Number: 91156 www.vishay.com6IRFI740GPbFTO-220 Full

 ..2. Size:1583K  vishay
 irfi740g sihfi740g.pdf

IRFI740G IRFI740G

IRFI740G, SiHFI740GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; AvailableRDS(on) ()VGS = 10 V 0.55f = 60 Hz)RoHS*Qg (Max.) (nC) 66COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 33 Low Thermal ResistanceConfiguration Sin

 0.1. Size:221K  international rectifier
 irfi740glc.pdf

IRFI740G IRFI740G

 0.2. Size:1296K  vishay
 irfi740glc sihfi740glc.pdf

IRFI740G IRFI740G

IRFI740GLC, SiHFI740GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS* Isolated PackageQg (Max.) (nC) 39COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 10f = 60 Hz)Qgd (nC) 19 Sink to Lead C

 7.1. Size:220K  1
 irfi740a irfw740a.pdf

IRFI740G IRFI740G

 7.2. Size:679K  fairchild semi
 irfw740b irfi740b.pdf

IRFI740G IRFI740G

November 2001IRFW740B / IRFI740B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to

Datasheet: IRFI644G , IRFI710A , IRFI720A , IRFI720G , IRFI730A , IRFI730G , IRFI734G , IRFI740A , CEP83A3 , IRFI740GLC , IRFI744G , IRFI820A , IRFI820G , IRFI830A , IRFI830G , IRFI840A , IRFI840G .

 

 
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