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AP01L60T-HF Spec and Replacement


   Type Designator: AP01L60T-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
   Package: TO92

 AP01L60T-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP01L60T-HF Specs

 ..1. Size:90K  ape
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AP01L60T-HF

AP01L60T-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 600V D Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 160mA G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, ... See More ⇒

 4.1. Size:86K  ape
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AP01L60T-HF

AP01L60T-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 700V D Fast Switching Characteristics RDS(ON) 13.5 Simple Drive Requirement ID 160mA G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistan... See More ⇒

 4.2. Size:206K  ape
ap01l60t-h.pdf pdf_icon

AP01L60T-HF

AP01L60T-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 700V D Fast Switching Characteristics RDS(ON) 13.5 Simple Drive Requirement ID 160mA G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistan... See More ⇒

 6.1. Size:92K  ape
ap01l60t.pdf pdf_icon

AP01L60T-HF

AP01L60T RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 600V D Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 160mA G S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effect... See More ⇒

Detailed specifications: AP02N90JB , AP02N90J , AP02N90H , AP01L60T-H , AP01L60H-A-HF , AP01L60H-H , AP01L60J-A-HF , AP01L60J-H , 2N7000 , AP01N40J , AP02N60H-HF , AP02N60H-H-HF , AP02N60J-HF , AP02N60J-H-HF , AP02N60P , AP02N60P-HF , AP02N70EJ-HF .

History: IPP111N15N3 | RJK1001DPP-E0 | IPP111N15N3G | SSF11NS65UD | HM85P02 | SQM85N10-10 | UPA1763G

Keywords - AP01L60T-HF MOSFET specs

 AP01L60T-HF cross reference
 AP01L60T-HF equivalent finder
 AP01L60T-HF lookup
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