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AP02N60J-H-HF Spec and Replacement


   Type Designator: AP02N60J-H-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.8 Ohm
   Package: TO251

 AP02N60J-H-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP02N60J-H-HF Specs

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 ap02n60h-h-hf ap02n60j-h-hf.pdf pdf_icon

AP02N60J-H-HF

AP02N60H/J-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 700V D Fast Switching Characteristic RDS(ON) 8.8 Simple Drive Requirement ID 1.4A G RoHS Compliant S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and ... See More ⇒

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 ap02n60h-h ap02n60j-h.pdf pdf_icon

AP02N60J-H-HF

AP02N60H/J-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Lower Gate Charge RDS(ON) 8.8 Fast Switching Characteristic ID 1.4A G Simple Drive Requirement S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications ... See More ⇒

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 ap02n60h-hf ap02n60j-hf.pdf pdf_icon

AP02N60J-H-HF

AP02N60H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Lower Gate Charge RDS(ON) 8 Simple Drive Requirement ID 1.6A G RoHS Compliant S Description G D TO-252(H) S The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC... See More ⇒

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 ap02n60h ap02n60j.pdf pdf_icon

AP02N60J-H-HF

AP02N60H/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 600V D 100% Avalanche Test RDS(ON) 8 Simple Drive Requirement ID 1.6A G S Description G D TO-252(H) S The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The th... See More ⇒

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Detailed specifications: AP01L60H-H , AP01L60J-A-HF , AP01L60J-H , AP01L60T-HF , AP01N40J , AP02N60H-HF , AP02N60H-H-HF , AP02N60J-HF , IRF630 , AP02N60P , AP02N60P-HF , AP02N70EJ-HF , AP02N90I-HF , AP03N70H-H-HF , AP03N70I-H-HF , AP03N70J-H-HF , AP0403GH .

History: AP05FN50I-HF | F50N20 | PSMN3R9-100YSF | PSMN3R3-40MSH | AP0803GMT-A-HF | HAF1002L | PN4861

Keywords - AP02N60J-H-HF MOSFET specs

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