AP02N60J-H-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP02N60J-H-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 27 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.8 Ohm
Package: TO251
AP02N60J-H-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP02N60J-H-HF Datasheet (PDF)
ap02n60h-h-hf ap02n60j-h-hf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AP02N60H/J-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 700VD Fast Switching Characteristic RDS(ON) 8.8 Simple Drive Requirement ID 1.4AG RoHS CompliantSDescriptionGDS TO-252(H)The TO-252 package is widely preferred for all commercial-industrialsurface mount applications and
ap02n60h-h ap02n60j-h.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AP02N60H/J-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Lower Gate Charge RDS(ON) 8.8 Fast Switching Characteristic ID 1.4AG Simple Drive RequirementSDescriptionGDS TO-252(H)The TO-252 package is widely preferred for all commercial-industrialsurface mount applications
ap02n60h-hf ap02n60j-hf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AP02N60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Lower Gate Charge RDS(ON) 8 Simple Drive Requirement ID 1.6AG RoHS CompliantSDescriptionGDTO-252(H)SThe TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suited for AC
ap02n60h ap02n60j.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AP02N60H/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 600VD 100% Avalanche Test RDS(ON) 8 Simple Drive Requirement ID 1.6AGSDescriptionGDTO-252(H)SThe TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suited for AC/DC converters. Theth
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
![AP02N60J-H-HF](https://alltransistors.com/images/us.png)
![AP02N60J-H-HF](https://alltransistors.com/images/es.png)
![AP02N60J-H-HF](https://alltransistors.com/images/ru.png)
LIST
Last Update
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C