All MOSFET. AP02N60J-H-HF Datasheet

 

AP02N60J-H-HF Datasheet and Replacement


   Type Designator: AP02N60J-H-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 14 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.8 Ohm
   Package: TO251
 

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AP02N60J-H-HF Datasheet (PDF)

 ..1. Size:65K  ape
 ap02n60h-h-hf ap02n60j-h-hf.pdf pdf_icon

AP02N60J-H-HF

AP02N60H/J-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 700VD Fast Switching Characteristic RDS(ON) 8.8 Simple Drive Requirement ID 1.4AG RoHS CompliantSDescriptionGDS TO-252(H)The TO-252 package is widely preferred for all commercial-industrialsurface mount applications and

 4.1. Size:246K  ape
 ap02n60h-h ap02n60j-h.pdf pdf_icon

AP02N60J-H-HF

AP02N60H/J-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Lower Gate Charge RDS(ON) 8.8 Fast Switching Characteristic ID 1.4AG Simple Drive RequirementSDescriptionGDS TO-252(H)The TO-252 package is widely preferred for all commercial-industrialsurface mount applications

 4.2. Size:98K  ape
 ap02n60h-hf ap02n60j-hf.pdf pdf_icon

AP02N60J-H-HF

AP02N60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Lower Gate Charge RDS(ON) 8 Simple Drive Requirement ID 1.6AG RoHS CompliantSDescriptionGDTO-252(H)SThe TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suited for AC

 6.1. Size:102K  ape
 ap02n60h ap02n60j.pdf pdf_icon

AP02N60J-H-HF

AP02N60H/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 600VD 100% Avalanche Test RDS(ON) 8 Simple Drive Requirement ID 1.6AGSDescriptionGDTO-252(H)SThe TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suited for AC/DC converters. Theth

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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IXTA05N100HV | IXTA02N250HV

Keywords - AP02N60J-H-HF MOSFET datasheet

 AP02N60J-H-HF cross reference
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 AP02N60J-H-HF substitution
 AP02N60J-H-HF replacement

 

 
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