AP0803GMT-A-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP0803GMT-A-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 29.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5 nC
trⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: DFN5X6
AP0803GMT-A-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP0803GMT-A-HF Datasheet (PDF)
ap0803gmt-a-hf.pdf
AP0803GMT-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 8.5m Low On-resistance ID 50AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugg
ap0803gmt-hf.pdf
AP0803GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 8.5m Low On-resistance ID 50AG RoHS CompliantSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device des
ap0803gmp-hf.pdf
AP0803GMP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low On-resistance RDS(ON) 9.5m RoHS Compliant & Halogen-Free ID 44AGSDescriptionDDAdvanced Power MOSFETs from APEC provide the DDDdesigner with the best combination of fast switching,ruggedized device design,
Datasheet: AP0403GH , AP04N60I-HF , AP04N60J-HF , AP04N70BI-A-HF , AP04N70BI-HF , AP05FN50I , AP05FN50I-HF , AP05N50I-HF , AON7408 , AP0904GP-HF , AP09N20BGS-HF , AP09N70P-A-HF , AP09N70P-H-LF , AP1003BST , AP1004CMX , AP1005BSQ , AP10N70I-A .
