AP0803GMT-A-HF Datasheet. Specs and Replacement

Type Designator: AP0803GMT-A-HF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 29.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: DFN5X6

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AP0803GMT-A-HF datasheet

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AP0803GMT-A-HF

AP0803GMT-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 8.5m Low On-resistance ID 50A G RoHS Compliant & Halogen-Free S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugg... See More ⇒

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AP0803GMT-A-HF

AP0803GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 8.5m Low On-resistance ID 50A G RoHS Compliant S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device des... See More ⇒

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AP0803GMT-A-HF

AP0803GMP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low On-resistance RDS(ON) 9.5m RoHS Compliant & Halogen-Free ID 44A G S Description D D Advanced Power MOSFETs from APEC provide the D D D designer with the best combination of fast switching, ruggedized device design,... See More ⇒

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AP0803GMT-A-HF

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Detailed specifications: AP0403GH, AP04N60I-HF, AP04N60J-HF, AP04N70BI-A-HF, AP04N70BI-HF, AP05FN50I, AP05FN50I-HF, AP05N50I-HF, 13N50, AP0904GP-HF, AP09N20BGS-HF, AP09N70P-A-HF, AP09N70P-H-LF, AP1003BST, AP1004CMX, AP1005BSQ, AP10N70I-A

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