AP1203GM Datasheet and Replacement
Type Designator: AP1203GM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SO8
AP1203GM substitution
AP1203GM Datasheet (PDF)
ap1203gm.pdf

AP1203GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 12mD Fast Switching Characteristic ID 11.2AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device de
ap1203gh.pdf

AP1203GHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 37AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,STO-252(H)ruggedized device desi
ap1203agmt-hf.pdf

AP1203AGMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 12m Low On-resistance ID 37AG RoHS CompliantSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedi
Datasheet: AP09N70P-H-LF , AP1003BST , AP1004CMX , AP1005BSQ , AP10N70I-A , AP10P10GK-HF , AP11N50I-HF , AP1203GH , IRF1407 , AP1333GU-HF , AP13N50W-HF , AP13P15GP , AP13P15GS , AP15N03GI , AP15N03GJ , AP15P10GP-HF , AP15P10GS-HF .
History: IXFT30N60P
Keywords - AP1203GM MOSFET datasheet
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History: IXFT30N60P



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