AP6680AGM-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP6680AGM-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 220 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: SO8
AP6680AGM-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP6680AGM-HF Datasheet (PDF)
ap6680agm-hf.pdf
AP6680AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 12AG RoHS Compliant & Halogen-FreeSDDDescriptionDAdvanced Power MOSFETs from APEC provide the Ddesigner with the best combination of fast switching,
ap6680agm.pdf
AP6680AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 12AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the Ddesigner with the best combination of fast switching,Gruggedized device design, ultra
ap6680bgm-hf.pdf
AP6680BGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 9mD Fast Switching Characteristic ID 13.3AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of f
ap6680cgyt-hf.pdf
AP6680CGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 15AGSDDDescriptionDAP6680C series are from Advanced Power innovated design and siliconDprocess technology to achieve the lowest possible on-re
ap6680sgyt-hf.pdf
AP6680SGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL MOSFET WITH SCHOTTKYElectronics Corp. DIODED Simple Drive Requirement BVDSS 30V Small Size & Lower Profile RDS(ON) 9mSchottky Diode RoHS Compliant & Halogen-Free ID 15AGSDDDescriptionDAP6680S series are from Advanced Power innovated design and siliconDprocess technology to achieve the lowest p
ap6680bgyt-hf.pdf
AP6680BGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 16AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching,ruggedized device desi
ap6680gm.pdf
AP6680GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLowOn-Resistance BVDSS 30V Low On-ResistanceLowOn-Resistance Low On-ResistanceDDHighVgsMaxRatingVoltage D RDS(ON) 11m High Vgs Max Rating VoltageHighVgsMaxRatingVoltage High Vgs Max Rating VoltageDSurfaceMountPackage ID 11.5A Surfa
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXTH12N120
History: IXTH12N120
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