AP3310GJ Datasheet and Replacement
Type Designator: AP3310GJ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO251
AP3310GJ substitution
AP3310GJ Datasheet (PDF)
ap3310gj ap3310gh.pdf

AP3310GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 150m Fast Switching Characteristic ID -10AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the GDSTO-252(H)best combination of fast switching, low on-resistan
ap3310gh-hf ap3310gj-hf.pdf

AP3310GH/J-HFRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 150m Fast Switching Characteristic ID -10AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best GDSTO-252(H)combination of fast switching, low on-resis
ap3310gh.pdf

AP3310GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 150m Fast Switching Characteristic ID -10AG RoHS Compliant & Halogen-FreeSDescriptionAP3310 series are from Advanced Power innovated design andsilicon process technology to achieve th
Datasheet: AP2761I-A-HF , AP2762I-A , AP2764AP-A , AP2764I-A-HF , AP2R803GH , AP2R803GM-HF , AP2R803GS-HF , AP30P10GS-HF , K3569 , AP3801GM-HF , AP3989I-HF , AP3R604GH , AP4002H-HF , AP4002J-HF , AP4002T , AP4036AGM-HF , AP40N03GH-HF .
History: 2SK1446 | SVF2N60CNF | BUK9624-55A
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History: 2SK1446 | SVF2N60CNF | BUK9624-55A



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