AP3310GJ MOSFET. Datasheet pdf. Equivalent
Type Designator: AP3310GJ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.5 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO251
AP3310GJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP3310GJ Datasheet (PDF)
ap3310gj ap3310gh.pdf
AP3310GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 150m Fast Switching Characteristic ID -10AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the GDSTO-252(H)best combination of fast switching, low on-resistan
ap3310gh-hf ap3310gj-hf.pdf
AP3310GH/J-HFRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 150m Fast Switching Characteristic ID -10AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best GDSTO-252(H)combination of fast switching, low on-resis
ap3310gh.pdf
AP3310GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 150m Fast Switching Characteristic ID -10AG RoHS Compliant & Halogen-FreeSDescriptionAP3310 series are from Advanced Power innovated design andsilicon process technology to achieve th
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NP32N055IHE | FQI7N80 | TK16A45D | FQB27P06TM
History: NP32N055IHE | FQI7N80 | TK16A45D | FQB27P06TM
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918