AP4407GP-HF
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP4407GP-HF
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 54
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 35
nC
trⓘ - Rise Time: 64
nS
Cossⓘ -
Output Capacitance: 630
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014
Ohm
Package:
TO220
AP4407GP-HF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP4407GP-HF
Datasheet (PDF)
..1. Size:98K ape
ap4407gp-hf ap4407gs-hf.pdf
AP4407GS/P-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching, rugge
6.1. Size:218K ape
ap4407gp ap4407gs.pdf
AP4407GS/PRoHS-compliat ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching, ruggedized device design,DS TO-263(
7.1. Size:170K ape
ap4407gm.pdf
AP4407GM-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET BVDSS -30V Simple Drive Requirement DD D RDS(ON) 14m Low On-resistance D ID -10.7A Fast Switching G RoHS Compliant & Halogen-Free SSSO-8SDDescriptionAP4407 series are from Advanced Pow
7.2. Size:208K ape
ap4407gm-hf.pdf
AP4407GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Low On-resistance D RDS(ON) 14mD Fast Switching ID -10.7AG RoHS Compliant SSSO-8SDDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching, ruggedized d
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