All MOSFET. AP9997GP Datasheet

 

AP9997GP MOSFET. Datasheet pdf. Equivalent

Type Designator: AP9997GP

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 34.7 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 11 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 17 nS

Drain-Source Capacitance (Cd): 65 pF

Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm

Package: TO220

AP9997GP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AP9997GP Datasheet (PDF)

1.1. ap9997gp.pdf Size:144K _a-power

AP9997GP
AP9997GP

AP9997GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Simple Drive Requirement BVDSS 100V ▼ Lower Gate Charge RDS(ON) 120mΩ ▼ Fast Switching Characteristic ID 11A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistan

1.2. ap9997gp-hf.pdf Size:93K _a-power

AP9997GP
AP9997GP

AP9997GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Simple Drive Requirement BVDSS 100V Ў Lower Gate Charge RDS(ON) 120m? Ў Fast Switching Characteristic ID 11A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and

 3.1. ap9997gj-hf.pdf Size:97K _a-power

AP9997GP
AP9997GP

AP9997GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Simple Drive Requirement BVDSS 100V Ў Lower Gate Charge RDS(ON) 120m? Ў Fast Switching Characteristic ID 11A G Ў RoHS Compliant & Halogen-Free S Description G D Advanced Power MOSFETs from APEC provide the S TO-252(H) designer with the best combination of fast switchi

3.2. ap9997gh-hf.pdf Size:97K _a-power

AP9997GP
AP9997GP

AP9997GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Simple Drive Requirement BVDSS 100V Ў Lower Gate Charge RDS(ON) 120m? Ў Fast Switching Characteristic ID 11A G Ў RoHS Compliant & Halogen-Free S Description G D Advanced Power MOSFETs from APEC provide the S TO-252(H) designer with the best combination of fast switchi

 3.3. ap9997gm.pdf Size:182K _a-power

AP9997GP
AP9997GP

AP9997GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Fast Switching Characteristic BVDSS 95V D2 D2 Ў Single Drive Requirement RDS(ON) 110m? D1 D1 Ў Surface Mount Package ID 3A G2 S2 G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, ruggedized d

3.4. ap9997gk.pdf Size:94K _a-power

AP9997GP
AP9997GP

AP9997GK RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 100V D Ў Lower Gate Charge RDS(ON) 120m? Ў Fast Switching Characteristic ID 3.2A S D SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and cost-effec

 3.5. ap9997gk-hf.pdf Size:94K _a-power

AP9997GP
AP9997GP

AP9997GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 100V D ▼ Lower Gate Charge RDS(ON) 120mΩ S ▼ Fast Switching Characteristic ID 3.2A D ▼ Halogen Free & RoHS Compliant Product SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of

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