IRFI9640G
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFI9640G
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 6.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 44(max)
nC
trⓘ - Rise Time: 43
nS
Cossⓘ -
Output Capacitance: 370
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5
Ohm
Package:
TO220F
IRFI9640G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFI9640G
Datasheet (PDF)
..2. Size:1100K international rectifier
irfi9640gpbf.pdf 
PD- 95351IRFI9640GPbF Lead-Free06/04/01Document Number: 91169 www.vishay.com1IRFI9640GPbFDocument Number: 91169 www.vishay.com2IRFI9640GPbFDocument Number: 91169 www.vishay.com3IRFI9640GPbFDocument Number: 91169 www.vishay.com4IRFI9640GPbFDocument Number: 91169 www.vishay.com5IRFI9640GPbFDocument Number: 91169 www.vishay.com6IRFI9640GPbFDocum
..3. Size:1655K vishay
irfi9640gpbf sihfi9640g.pdf
IRFI9640G, SiHFI9640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.50RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 44COMPLIANT P-ChannelQgs (nC) 7.1 Dynamic dV/dt RatingQgd (nC) 27 Low Thermal Resist
..4. Size:1653K vishay
irfi9640g sihfi9640g.pdf
IRFI9640G, SiHFI9640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.50RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 44COMPLIANT P-ChannelQgs (nC) 7.1 Dynamic dV/dt RatingQgd (nC) 27 Low Thermal Resist
8.1. Size:363K international rectifier
irfi9634g.pdf
PD - 95610IRFI9634GPbF Lead-Free7/29/04Document Number: 91168 www.vishay.com1IRFI9634GPbFDocument Number: 91168 www.vishay.com2IRFI9634GPbFDocument Number: 91168 www.vishay.com3IRFI9634GPbFDocument Number: 91168 www.vishay.com4IRFI9634GPbFDocument Number: 91168 www.vishay.com5IRFI9634GPbFDocument Number: 91168 www.vishay.com6IRFI9634GPbFDocum
8.2. Size:1324K international rectifier
irfi9620gpbf.pdf
PD- 95744IRFI9620GPbF Lead-Free8/23/04Document Number: 91166 www.vishay.com1IRFI9620GPbFDocument Number: 91166 www.vishay.com2IRFI9620GPbFDocument Number: 91166 www.vishay.com3IRFI9620GPbFDocument Number: 91166 www.vishay.com4IRFI9620GPbFDocument Number: 91166 www.vishay.com5IRFI9620GPbFDocument Number: 91166 www.vishay.com6IRFI9620GPbFPeak D
8.4. Size:232K international rectifier
irfi9610gpbf.pdf
PD - 95504IRFI9610GPbFHEXFET Power MOSFETl Isolated PackageDl High Voltage Isolation=2.5KVRMS VDSS = -200Vl Sink to Lead Creepage Dist.=4.8mml P-ChannelRDS(on) = 3.0l Dynamic dv/dt RatingGl Low thermal ResistanceID = -2.0Al Lead-FreeSDescriptionThird Generation HEXFETs from International Rectifier provide the designer with thebest combination of fast
8.5. Size:924K international rectifier
irfi9630g.pdf
PD - 94851IRFI9630GPbF Lead-Free11/07/03Document Number: 91167 www.vishay.com1IRFI9630GPbFDocument Number: 91167 www.vishay.com2IRFI9630GPbFDocument Number: 91167 www.vishay.com3IRFI9630GPbFDocument Number: 91167 www.vishay.com4IRFI9630GPbFDocument Number: 91167 www.vishay.com5IRFI9630GPbFDocument Number: 91167 www.vishay.com6IRFI9630GPbFTO-2
8.6. Size:170K international rectifier
irfi9610g.pdf
PD - 94577IRFI9610GHEXFET Power MOSFETl Isolated PackageDl High Voltage Isolation=2.5KVRMS VDSS = -200Vl Sink to Lead Creepage Dist.=4.8mml P-ChannelRDS(on) = 3.0l Dynamic dv/dt RatingGl Low thermal ResistanceID = -2.0ASDescriptionThird Generation HEXFETs from International Rectifier provide the designer with thebest combination of fast switching, rugge
8.7. Size:814K vishay
irfi9610g sihfi9610g.pdf
IRFI9610G, SiHFI9610GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = - 10 V 3.0f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANTQg (Max.) (nC) 13 P-ChannelQgs (nC) 3.2 Dynamic dV/dt RatingQgd (nC) 7.3 Low Thermal Resista
8.8. Size:832K vishay
irfi9634gpbf sihfi9634g.pdf
IRFI9634G, SiHFI9634GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) - 250 Dynamic dV/dt RatingRDS(on) ()VGS = - 10 V 1.0 150 C Operating TemperatureQg (Max.) (nC) 38 Fast SwitchingQgs (nC) 8.0 P-ChannelQgd (nC) 18 Fully Avalanche RatedConfiguration Single Lead (Pb)-free AvailableSDESCRIPTION
8.9. Size:831K vishay
irfi9634g sihfi9634g.pdf
IRFI9634G, SiHFI9634GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) - 250 Dynamic dV/dt RatingRDS(on) ()VGS = - 10 V 1.0 150 C Operating TemperatureQg (Max.) (nC) 38 Fast SwitchingQgs (nC) 8.0 P-ChannelQgd (nC) 18 Fully Avalanche RatedConfiguration Single Lead (Pb)-free AvailableSDESCRIPTION
8.10. Size:1550K vishay
irfi9630gpbf sihfi9630g.pdf
IRFI9630G, SiHFI9630GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s,Availablef = 60 Hz) RDS(on) ()VGS = - 10 V 0.80RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 29 COMPLIANT P-ChannelQgs (nC) 5.4 Dynamic dV/dt RatingQgd (nC) 15 Low Thermal Resist
8.11. Size:1647K vishay
irfi9620gpbf sihfi9620g.pdf
IRFI9620G, SiHFI9620GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = - 10 V 1.5f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 15 P-ChannelQgs (nC) 3.2 Dynamic dV/dtQgd (nC) 8.4 Low Thermal ResistanceConf
8.12. Size:1671K vishay
irfi9620g sihfi9620g.pdf
IRFI9620G, SiHFI9620GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = - 10 V 1.5f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 15 P-ChannelQgs (nC) 3.2 Dynamic dV/dtQgd (nC) 8.4 Low Thermal ResistanceConf
8.13. Size:1549K vishay
irfi9630g sihfi9630g.pdf
IRFI9630G, SiHFI9630GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s,Availablef = 60 Hz) RDS(on) ()VGS = - 10 V 0.80RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 29 COMPLIANT P-ChannelQgs (nC) 5.4 Dynamic dV/dt RatingQgd (nC) 15 Low Thermal Resist
8.14. Size:790K vishay
irfi9610g-pbf sihfi9610g.pdf
IRFI9610G, SiHFI9610GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = - 10 V 3.0f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANTQg (Max.) (nC) 13 P-ChannelQgs (nC) 3.2 Dynamic dV/dt RatingQgd (nC) 7.3 Low Thermal Resista
Datasheet: IRFI840G
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, IRFI9630G
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