All MOSFET. AP9563GK-HF Datasheet

 

AP9563GK-HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP9563GK-HF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 6.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOT223

 AP9563GK-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP9563GK-HF Datasheet (PDF)

 6.1. Size:96K  ape
ap9563gk.pdf

AP9563GK-HF AP9563GK-HF

AP9563GKRoHS-compliat ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VD Lower Gate Charge RDS(ON) 40mS Fast Switching Characteristic ID -6.8ADGSOT-223DDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, low on-resistance and cost-G

 7.1. Size:99K  ape
ap9563gh-hf ap9563gj-hf.pdf

AP9563GK-HF AP9563GK-HF

AP9563GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26AG RoHS CompliantSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,r

 7.2. Size:235K  ape
ap9563gh.pdf

AP9563GK-HF AP9563GK-HF

AP9563GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26AG RoHS CompliantSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,r

 7.3. Size:178K  ape
ap9563gm.pdf

AP9563GK-HF AP9563GK-HF

AP9563GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 40mD Fast Switching Characteristic ID -6AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP9563 series are from Advanced Power innovated designand silicon process technology

 7.4. Size:57K  ape
ap9563gm-hf.pdf

AP9563GK-HF AP9563GK-HF

AP9563GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 40mD Fast Switching Characteristic ID -6AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa

 7.5. Size:186K  ape
ap9563gj.pdf

AP9563GK-HF AP9563GK-HF

AP9563GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26AG RoHS CompliantSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,r

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BUK9Y22-100E

 

 
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