IRF241 PDF and Equivalents Search

 

IRF241 Specs and Replacement

Type Designator: IRF241

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO3

IRF241 substitution

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IRF241 datasheet

 ..1. Size:215K  samsung
 irf240 irf241 irf242 irf243.pdf pdf_icon

IRF241

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 9.1. Size:146K  international rectifier
 irf240.pdf pdf_icon

IRF241

PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRF240 THRU-HOLE (TO-204AA/AE) 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF240 200V 0.18 18A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design a... See More ⇒

 9.2. Size:22K  semelab
 irf240smd.pdf pdf_icon

IRF241

IRF240SMD SEME LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET VDSS 200V ID(cont) 13.9A RDS(on) 0.180 FEATURES HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE. SIMPLE DRIVE REQUIREMENTS ... See More ⇒

Detailed specifications: AP92LT10GP-HF, AP92T03GH, AP92T03GS, AP93T03AGH-HF, IRF231, IRF232, IRF233, IRF240SMD, IRFZ44N, IRF242, IRF243, IRF250B, IRF250C, IRF250SMD, IRF251, IRF252, IRF253

Keywords - IRF241 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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