All MOSFET. IRF250B Datasheet

 

IRF250B MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF250B

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 190 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 140 nC

Rise Time (tr): 86 nS

Drain-Source Capacitance (Cd): 780 pF

Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm

Package: TO3PB

IRF250B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF250B Datasheet (PDF)

1.1. irf250b irf250c.pdf Size:410K _upd

IRF250B
IRF250B

RoHS IRF250 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 30A, 200Volts DESCRIPTION D The Nell IRF250 is a three-terminal silicon device with current conduction capability of 30A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

4.1. irf250 irf251 irf252 irf253.pdf Size:215K _upd

IRF250B
IRF250B



4.2. irf250smd.pdf Size:23K _upd

IRF250B
IRF250B

IRF250SMD MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET VDSS 200V ID(cont) 14A RDS(on) 0.100 FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS

 4.3. irf250p224.pdf Size:1062K _update-mosfet

IRF250B
IRF250B

IRF250P224 MOSFET StrongIRFET™ V 250V D DSS R DS(on) typ. 9.0m G Applications max 12m  UPS and Inverter applications S I 128A D  Half-bridge and full-bridge topologies  Resonant mode power supplies  DC/DC and AC/DC converters  OR-ing and redundant power switches  Brushed and BLDC Motor drive applications  Battery powered circuits

4.4. irf250p225.pdf Size:1059K _update-mosfet

IRF250B
IRF250B

IRF250P225 IR MOSFET - StrongIRFET™ V 250V D DSS R DS(on) typ. 18m G max 22m Applications S I 69A D  UPS and Inverter applications  Half-bridge and full-bridge topologies D  Resonant mode power supplies  DC/DC and AC/DC converters  OR-ing and redundant power switches S D  Brushed and BLDC Motor drive applications G TO-247AC

 4.5. 2n6766 irf250.pdf Size:145K _international_rectifier

IRF250B
IRF250B

PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766 HEXFET?TRANSISTORS JANTXV2N6766 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF250 200V 0.085? 30A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. TO-3 The efficient geometry and unique processing

4.6. irf250p224.pdf Size:241K _inchange_semiconductor

IRF250B
IRF250B

isc N-Channel MOSFET Transistor IRF250P224,IIRF250P224 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤12mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·OR-ring and redundant power switches ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

4.7. irf250p225.pdf Size:242K _inchange_semiconductor

IRF250B
IRF250B

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF250P225,IIRF250P225 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·OR-ring and redundant power switches ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VA

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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