IRF332R Specs and Replacement
Type Designator: IRF332R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ -
Output Capacitance: 150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO204AA
- MOSFET ⓘ Cross-Reference Search
IRF332R datasheet
9.1. Size:267K international rectifier
irf3305pbf.pdf 
PD - 95758A IRF3305PbF Features HEXFET Power MOSFET Designed to support Linear Gate Drive Applications D 175 C Operating Temperature VDSS = 55V Low Thermal Resistance Junction - Case Rugged Process Technology and Design RDS(on) = 8.0m Fully Avalanche Rated G Lead-Free ID = 75A S Description This HEXFET Power MOSFET utilizes a rugged planar process technology and dev... See More ⇒
9.2. Size:197K international rectifier
irf3315s.pdf
PD - 9.1617A IRF3315S/L PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175 C Operating Temperature Fast Switching RDS(on) = 0.082 G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev... See More ⇒
9.3. Size:146K international rectifier
2n6760 irf330.pdf
PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760 HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF330 400V 1.00 5.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces... See More ⇒
9.4. Size:314K international rectifier
auirf3315s.pdf
PD - 97733 AUTOMOTIVE GRADE AUIRF3315S Features HEXFET Power MOSFET l Advanced Planar Technology D l Low On-Resistance VDSS 150V l Dynamic dV/dT Rating l 175 C Operating Temperature RDS(on) max. 82m G l Fast Switching ID 21A l Fully Avalanche Rated S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * D Description S ... See More ⇒
9.5. Size:231K international rectifier
irf3315pbf.pdf
PD - 94825A IRF3315PbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 150V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.070 G l Lead-Free Description ID = 23A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silic... See More ⇒
9.6. Size:385K international rectifier
irf3315lpbf irf3315spbf.pdf
PD- 95760 IRF3315SPbF IRF3315LPbF Lead-Free www.irf.com 1 08/24/04 IRF3315S/LPbF 2 www.irf.com IRF3315S/LPbF www.irf.com 3 IRF3315S/LPbF 4 www.irf.com IRF3315S/LPbF www.irf.com 5 IRF3315S/LPbF 6 www.irf.com IRF3315S/LPbF www.irf.com 7 IRF3315S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 5... See More ⇒
9.7. Size:205K international rectifier
irf3315sl.pdf
PD - 9.1617B IRF3315S/L PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175 C Operating Temperature Fast Switching RDS(on) = 0.082 G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev... See More ⇒
9.8. Size:124K international rectifier
irf3315.pdf
PD -91623A APPROVED IRF3315 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 150V 175 C Operating Temperature Fast Switching RDS(on) = 0.07 Fully Avalanche Rated G Description ID = 27A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Thi... See More ⇒
9.9. Size:385K international rectifier
irf3315spbf irf3315lpbf.pdf
PD- 95760 IRF3315SPbF IRF3315LPbF Lead-Free www.irf.com 1 08/24/04 IRF3315S/LPbF 2 www.irf.com IRF3315S/LPbF www.irf.com 3 IRF3315S/LPbF 4 www.irf.com IRF3315S/LPbF www.irf.com 5 IRF3315S/LPbF 6 www.irf.com IRF3315S/LPbF www.irf.com 7 IRF3315S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 5... See More ⇒
9.10. Size:197K international rectifier
irf3315l.pdf
PD - 9.1617A IRF3315S/L PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175 C Operating Temperature Fast Switching RDS(on) = 0.082 G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev... See More ⇒
9.11. Size:1364K infineon
auirf3305.pdf
AUTOMOTIVE GRADE AUIRF3305 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance V(BR)DSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 8.0m Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 140A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically de... See More ⇒
9.12. Size:258K inchange semiconductor
irf3315s.pdf
Isc N-Channel MOSFET Transistor IRF3315S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt... See More ⇒
9.13. Size:245K inchange semiconductor
irf3305.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3305 IIRF3305 FEATURES Static drain-source on-resistance RDS(on) 8.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R... See More ⇒
9.14. Size:331K inchange semiconductor
irf3305b.pdf
isc N-Channel MOSFET Transistor IRF3305B FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 55V(Min) DSS Static Drain-Source On-Resistance R = 8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM R... See More ⇒
9.15. Size:245K inchange semiconductor
irf3315.pdf
isc N-Channel MOSFET Transistor IRF3315 IIRF3315 FEATURES Static drain-source on-resistance RDS(on) 70m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Combine with the fast switching speed and ruggedized device design ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒
9.16. Size:256K inchange semiconductor
irf3315l.pdf
Isc N-Channel MOSFET Transistor IRF3315L FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150... See More ⇒
Detailed specifications: IRF321, IRF322, IRF323, IRF3305PBF, IRF330R, IRF331, IRF331R, IRF332, IRFP250N, IRF333, IRF333R, IRF3000, IRF3000PBF, IRF3007PBF, IRF3007SPBF, IRF3315LPBF, IRF3315PBF
Keywords - IRF332R MOSFET specs
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