All MOSFET. IRF432 Datasheet

 

IRF432 Datasheet and Replacement


   Type Designator: IRF432
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO3
 

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IRF432 Datasheet (PDF)

 ..1. Size:211K  samsung
 irf430 irf431 irf432 irf433.pdf pdf_icon

IRF432

 9.1. Size:146K  international rectifier
 2n6762 irf430.pdf pdf_icon

IRF432

PD - 90336FIRF430REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762HEXFETTRANSISTORS JANTXV2N6762THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF430 500V 1.5 4.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

 9.2. Size:141K  fairchild semi
 irf430.pdf pdf_icon

IRF432

 9.3. Size:56K  intersil
 irf430-3.pdf pdf_icon

IRF432

IRF430Data Sheet March 1999 File Number 1572.44.5A, 500V, 1.500 Ohm, N-Channel FeaturesPower MOSFET 4.5A, 500VThis N-Channel enhancement mode silicon gate power field rDS(ON) = 1.500effect transistor is an advanced power MOSFET designed, Single Pulse Avalanche Energy Ratedtested, and guaranteed to withstand a specified level ofenergy in the breakdown avalanche mo

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Datasheet: IRF352 , IRF353 , IRF3546M , IRF420 , IRF421 , IRF422 , IRF423 , IRF431 , AO4407 , IRF433 , IRF441 , IRF442 , IRF443 , IRF4410A , IRF4410H , IRF450B , IRF450C .

History: 2SK566 | SMG2334N

Keywords - IRF432 MOSFET datasheet

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