IRF432 PDF and Equivalents Search

 

IRF432 Specs and Replacement

Type Designator: IRF432

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO3

IRF432 substitution

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IRF432 datasheet

 ..1. Size:211K  samsung
irf430 irf431 irf432 irf433.pdf pdf_icon

IRF432

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 9.1. Size:146K  international rectifier
2n6762 irf430.pdf pdf_icon

IRF432

PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762 HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF430 500V 1.5 4.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces... See More ⇒

 9.2. Size:141K  fairchild semi
irf430.pdf pdf_icon

IRF432

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 9.3. Size:56K  intersil
irf430-3.pdf pdf_icon

IRF432

IRF430 Data Sheet March 1999 File Number 1572.4 4.5A, 500V, 1.500 Ohm, N-Channel Features Power MOSFET 4.5A, 500V This N-Channel enhancement mode silicon gate power field rDS(ON) = 1.500 effect transistor is an advanced power MOSFET designed, Single Pulse Avalanche Energy Rated tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mo... See More ⇒

Detailed specifications: IRF352 , IRF353 , IRF3546M , IRF420 , IRF421 , IRF422 , IRF423 , IRF431 , IRF530 , IRF433 , IRF441 , IRF442 , IRF443 , IRF4410A , IRF4410H , IRF450B , IRF450C .

Keywords - IRF432 MOSFET specs

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