All MOSFET. IRF460B Datasheet

 

IRF460B MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF460B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 280 W
   Maximum Drain-Source Voltage |Vds|: 500 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 20 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 210 nC
   Rise Time (tr): 59 nS
   Drain-Source Capacitance (Cd): 870 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm
   Package: TO3P

 IRF460B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF460B Datasheet (PDF)

 ..1. Size:413K  nell
 irf460b irf460c.pdf

IRF460B IRF460B

RoHS IRF460 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET20A, 500VoltsDESCRIPTIOND The Nell IRF460 is a three-terminal silicon devicewith current conduction capability of 20A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 500V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

 8.1. Size:140K  international rectifier
 irf460.pdf

IRF460B IRF460B

PD -90467REPETITIVE AVALANCHE AND dv/dt RATED IRF460500V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF460 500V 0.27 21The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design ach

 8.2. Size:271K  inchange semiconductor
 irf460-f2f.pdf

IRF460B IRF460B

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF460DESCRIPTIONRepetitive Avalanche RatingsDynamic dv/dt RatingHermetically SealedSimple Drive RequirementsEase of ParallelingAPPLICATIONSDesigned for applications such as switching powerSupplies ,motor controls ,inverters ,choppers ,audioamplifiers and high energy pulse circuits.ABSOLUTE MAXIMUM RATINGS

 8.3. Size:230K  inchange semiconductor
 irf460.pdf

IRF460B IRF460B

isc N-Channel MOSFET Transistor IRF460DESCRIPTIONRepetitive Avalanche RatingsDynamic dv/dt RatingHermetically SealedSimple Drive Requirements100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for applications such as switching powerSupplies ,motor controls ,inverters ,choppers ,audioamp

 8.4. Size:256K  inchange semiconductor
 irf460-f2.pdf

IRF460B IRF460B

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF460DESCRIPTIONRepetitive Avalanche RatingsDynamic dv/dt RatingHermetically SealedSimple Drive RequirementsEase of ParallelingAPPLICATIONSDesigned for applications such as switching powerSupplies ,motor controls ,inverters ,choppers ,audioamplifiers and high energy pulse circuits.ABSOLUTE MAXIMUM RATINGS

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF1404 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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