All MOSFET. IRF1503LPBF Datasheet

 

IRF1503LPBF Datasheet and Replacement


   Type Designator: IRF1503LPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 2250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TO262
 

 IRF1503LPBF substitution

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IRF1503LPBF Datasheet (PDF)

 ..1. Size:330K  international rectifier
irf1503lpbf irf1503spbf.pdf pdf_icon

IRF1503LPBF

PD - 95432AIRF1503SPbFIRF1503LPbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 30VBenefitsl Advanced Process Technologyl Ultra Low On-Resistance RDS(on) = 3.3mGl 175C Operating Temperaturel Fast SwitchingID = 75Al Repetitive Avalanche Allowed up to TjmaxSDescriptionThis Stripe Planar design of HEXFET Power MOSFETsutilizes th

 6.1. Size:661K  international rectifier
irf1503l irf1503s.pdf pdf_icon

IRF1503LPBF

PD - 94494AIRF1503SIRF1503LTypical ApplicationsHEXFET Power MOSFET 14V Automotive Electrical SystemsD 14V Electronic Power SteeringVDSS = 30VBenefits Advanced Process TechnologyRDS(on) = 3.3m Ultra Low On-ResistanceG 175C Operating Temperature Fast Switching ID = 75AS Repetitive Avalanche Allowed up to TjmaxDescriptionSpecificall

 7.1. Size:552K  international rectifier
irf1503.pdf pdf_icon

IRF1503LPBF

PD-94526AAUTOMOTIVE MOSFETIRF1503Typical ApplicationsHEXFET Power MOSFET 14V Automotive Electrical SystemsD 14V Electronic Power SteeringVDSS = 30VFeatures Advanced Process TechnologyRDS(on) = 3.3m Ultra Low On-ResistanceG 175C Operating Temperature Fast Switching ID = 75AS Repetitive Avalanche Allowed up to TjmaxDescriptionSpeci

 7.2. Size:268K  international rectifier
irf1503pbf.pdf pdf_icon

IRF1503LPBF

PD-95438AIRF1503PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 30VFeatures Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 3.3mG 175C Operating Temperature Fast SwitchingID = 75A Repetitive Avalanche Allowed up to TjmaxSDescriptionThis design of HEXFET Power MOSFETs utilizesthe lastest processing techniques to

Datasheet: IRLMS1503PBF , IRLMS1902PBF , IRLMS2002PBF , IRLMS5703PBF , IRLMS6702PBF-1 , IRLMS6702PBF , IRLMS6802PBF , IRF1503L , AON6380 , IRF1503PBF , IRF1503SPBF , IRF150B , IRF150C , IRF150SMD , IRF1607PBF , IRF1704 , IRF1902PBF .

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