All MOSFET. IRF200B211 Datasheet


IRF200B211 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF200B211

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 80 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.9 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 9.5 nS

Drain-Source Capacitance (Cd): 62 pF

Maximum Drain-Source On-State Resistance (Rds): 0.17 Ohm

Package: TO220AB

IRF200B211 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRF200B211 Datasheet (PDF)

1.1. irf200b211.pdf Size:542K _upd


 StrongIRFET™ IRF200B211 HEXFET® Power MOSFET Application  Brushed Motor drive applications VDSS 200V D  BLDC Motor drive applications Battery powered circuits RDS(on) typ. 135m  Half-bridge and full-bridge topologies G  Synchronous rectifier applications max 170m  Resonant mode power supplies S  DC/DC and AC/

Datasheet: IRF1503PBF , IRF1503SPBF , IRF150B , IRF150C , IRF150SMD , IRF1607PBF , IRF1704 , IRF1902PBF , BUK455-200A , IRLL2705PBF , IRLL3303PBF , IRLL014NPBF , IRLL014PBF , IRLL024NPBF , IRLL024ZPBF , IRLL110TRPBF , IRLL2703PBF .

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