IRF200B211 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF200B211
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 80 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.9 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 9.5 nS
Drain-Source Capacitance (Cd): 62 pF
Maximum Drain-Source On-State Resistance (Rds): 0.17 Ohm
Package: TO220AB
IRF200B211 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF200B211 Datasheet (PDF)
1.1. irf200b211.pdf 
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StrongIRFET™ IRF200B211 HEXFET® Power MOSFET Application Brushed Motor drive applications VDSS 200V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 135m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 170m Resonant mode power supplies S DC/DC and AC/
Datasheet: IRF1503PBF , IRF1503SPBF , IRF150B , IRF150C , IRF150SMD , IRF1607PBF , IRF1704 , IRF1902PBF , BUK455-200A , IRLL2705PBF , IRLL3303PBF , IRLL014NPBF , IRLL014PBF , IRLL024NPBF , IRLL024ZPBF , IRLL110TRPBF , IRLL2703PBF .
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